Inventor

HUAN-CHIEH SU

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 140 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices29%

H01LSemiconductor devices24%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%

B82YSpecific uses or applications of nanostructures18%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

C09KMaterials for miscellaneous applications, not provided for elsewhere0%

G01SRadio direction-finding0%

G02BOptical elements, systems or apparatus0%

G06TImage data processing or generation, in general0%

PatentTitleYear

12,588,242Field effect transistor with dual silicide and method2026 12,568,664Semiconductor device and method of manufacturing thereof2026 12,563,815Semiconductor structure having first silicide features and second silicide features and method for manufacturing the same2026 12,557,339Semiconductor device structure and methods of forming the same2026 12,550,370Semiconductor device and manufacturing method thereof2026 12,543,364Integrated circuit with backside metal gate cut for reduced coupling capacitance2026 12,538,510Semiconductor device and manufacturing method thereof2026 12,532,509Integrated circuit with backside trench for nanosheet removal2026 12,532,498Semiconductor device with reverse-cut source/drain contact structure and method thereof2026 12,532,505Semiconductor structure and method for forming the same2026 12,525,485Gate contact structure2026 12,507,438Semiconductor structure with contact rail and method for forming the same2025 12,506,066—2025 12,501,671Semiconductor device and manufacturing method thereof2025 12,500,142Semiconductor devices including through vias and methods of forming the same2025 12,495,601Gate structure for semiconductor device2025 12,484,254Integrated circuit structure with backside via rail2025 12,484,295Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors2025 12,471,315Semiconductor device including spacers on sides of dielectric structure and manufacturing method thereof2025 12,457,794Dual side contact structures for source/drain regions in semiconductor transistor devices and method of forming2025 12,453,174Integrated circuits with finFET gate structures2025 12,453,159Drain side recess for back-side power rail device2025 12,439,680Multi-gate device and related methods2025 12,432,975Semiconductor device with backside power rail2025 12,424,486Integrated circuit structure with backside interconnection structure having air gap2025 12,424,484Spacers for semiconductor devices including backside power rails2025 12,414,362Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate2025 12,402,345Semiconductor structure and method for forming the same2025 12,389,618Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same2025 12,382,710Method for forming long channel back-side power rail device2025 12,376,356Semiconductor devices with backside power rail and methods of fabrication thereof2025 12,369,365Semiconductor devices with backside power rail and method thereof2025 12,363,964Semiconductor device having dielectric hybrid fin2025 12,363,946Source/drain contacts and methods of forming same2025 12,363,939Semiconductor device with backside power rail and methods of fabrication thereof2025 12,356,688Method for forming semiconductor device2025 12,349,409Semiconductor device having a gate contact on a low-k liner2025 12,336,215Semiconductor device structure and method for forming the same2025 12,328,917Semiconductor structure having second contact structure over second side of first S/D structure2025 12,324,188Field effect transistor with source/drain contact isolation structure and method2025 12,324,215Semiconductor device structure with metal gate stack2025 12,317,528Gate isolation feature and manufacturing method thereof2025 12,300,727Process and structure for source/drain contacts2025 12,302,607Backside gate contact2025 12,283,521Methods of forming spacers for semiconductor devices including backside power rails2025 12,278,273Semiconductor device with backside gate isolation structure and method for forming the same2025 12,272,634Semiconductor structure having an anchor-shaped backside via2025 12,266,658Semiconductor devices with backside contacts and isolation2025 12,266,700Semiconductor nanostructures device structure with backside contact2025 12,266,538Method for manufacturing semiconductor device using etchant composition having high etching selectivity2025 12,266,654FinFET devices and methods of forming the same2025 12,255,103Semiconductor structure with backside via contact and a protection liner layer2025 12,243,823Semiconductor device having backside gate contact2025 12,237,418Liner for a bi-layer gate helmet and the fabrication thereof2025 12,230,572Backside signal interconnection2025 12,224,212Semiconductor devices with backside air gap dielectric2025 12,205,819Method and device for forming metal gate electrodes for transistors2025 12,148,805Semiconductor structure with wraparound backside amorphous layer2024 12,148,795Increasing device density and reducing cross-talk spacer structures2024 12,142,692Semiconductor device with isolation structure2024 12,132,092Backside vias in semiconductor device2024 12,125,852Multi-gate transistors with backside power rail and reduced gate-drain capacitance2024 12,107,146Self-aligned air spacers and methods for forming2024 12,107,011Method for fabricating a semiconductor device2024 12,094,973Semiconductor devices with backside power rail and methods of fabrication thereof2024 12,057,341Semiconductor device with gate cut structure and method of forming the same2024 12,046,516Semiconductor device with gate cut feature and method for forming the same2024 12,034,004Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors2024 12,021,136Gate isolation feature and manufacturing method thereof2024 12,009,394Source/drain contacts and methods of forming same2024 11,996,481Liner for a bi-layer gate helmet and the fabrication thereof2024 11,996,461Backside gate contact2024 11,984,350Integrated circuit structure with backside interconnection structure having air gap2024 11,978,802FinFET devices and methods of forming the same2024 11,978,773Formation method of semiconductor device structure with semiconductor nanostructures2024 11,955,552Semiconductor device with backside power rail and methods of fabrication thereof2024 11,955,515Dual side contact structures in semiconductor devices2024 11,948,973Gate-all-around field-effect transistor device2024 11,942,530Semiconductor devices with backside power rail and methods of fabrication thereof2024 11,935,794Method for forming long channel back-side power rail device2024 11,929,413Semiconductor device structure with metal gate stack2024 11,923,408Semiconductor devices with backside power rail and method thereof2024 11,915,972Methods of forming spacers for semiconductor devices including backside power rails2024 11,901,423Capacitance reduction for backside power rail device2024 11,901,428Semiconductor device with backside gate isolation structure and method for forming the same2024 11,854,908Multi-gate device and related methods2023 11,855,084Integrated circuits with FinFET gate structures2023 11,855,082Integrated circuits with FinFET gate structures2023 11,848,372Method and structure for reducing source/drain contact resistance at wafer backside2023 11,804,486Backside power rail and methods of forming the same2023 11,799,019Gate isolation feature and manufacturing method thereof2023 11,784,228Process and structure for source/drain contacts2023 11,784,233Integrated circuit structure with backside via rail2023 11,777,003Semiconductor structure with wraparound backside amorphous layer2023 11,769,696Method for fabricating a semiconductor device2023 11,742,428Formation method of semiconductor device with isolation structure2023 11,710,742Semiconductor devices with backside contacts and isolation2023 11,710,664Semiconductor structure with backside via contact and a protection liner layer2023 11,705,452Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors2023 11,664,280Semiconductor devices with backside air gap dielectric2023 11,658,226Backside gate contact2023 11,658,220Drain side recess for back-side power rail device2023 11,658,119Backside signal interconnection2023 11,631,638Semiconductor structure having an anchor-shaped backside via2023 11,621,197Semiconductor device with gate cut feature and method for forming the same2023 11,616,143Semiconductor devices with backside power rail and methods of fabrication thereof2023 11,588,050Backside contact2023 11,581,224Method for forming long channel back-side power rail device2023 11,557,510Spacers for semiconductor devices including backside power rails2023 11,557,660Method and device for forming cut-metal-gate feature2023 11,551,969Integrated circuit structure with backside interconnection structure having air gap2023 11,532,714Semiconductor device and method of forming thereof2022 11,532,744Gate cut structure and method of forming the same2022 11,532,703Semiconductor device and method2022 11,532,713Source/drain contacts and methods of forming same2022 11,527,609Increasing device density and reducing cross-talk spacer structures2022 11,521,858Method and device for forming metal gate electrodes for transistors2022 11,502,201Semiconductor device with backside power rail and methods of fabrication thereof2022 11,482,595Dual side contact structures in semiconductor devices2022 11,482,594Semiconductor devices with backside power rail and method thereof2022 11,456,368Semiconductor device structure with hard mask layer over fin structure and method for forming the same2022 11,456,209Spacers for semiconductor devices including a backside power rails2022 11,450,751Integrated circuit structure with backside via rail2022 11,443,987Semiconductor devices with backside air gap dielectric2022 11,437,279Method for fabricating a semiconductor device2022 11,430,789Semiconductor devices with backside contacts and isolation2022 11,417,745Structure and formation method of semiconductor device with metal gate stack2022 11,404,548Capacitance reduction for backside power rail device2022 11,387,233Semiconductor device structure and methods of forming the same2022 11,380,682Integrated circuits with FinFET gate structures2022 11,349,004Backside vias in semiconductor device2022 11,329,165Structure and formation method of semiconductor device with isolation structure2022 11,328,963Multi-gate device and related methods2022 11,322,493Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors2022 11,233,005Method for manufacturing an anchor-shaped backside via2022 11,222,892Backside power rail and methods of forming the same2022 11,211,293FinFET device and methods of forming the same2021 11,195,930Semiconductor devices with backside power rail and methods of fabrication thereof2021 11,158,512Fin field effect transistor (FinFET) device structure2021 11,152,487Method for manufacturing semiconductor device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (140)· patent assignee history

2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	140	2021–2026

Locations

Location	Patents	Span
TW	140	2021–2026