Inventor

Toshiaki Kuniyasu

Inventor

Kaisei-machi, JP

Overview

18→

Patents

2001–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light22%

B06BMethods or apparatus for generating or transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency, e.g. for performing mechanical work in general8%

G01NInvestigating or analysing materials by determining their chemical or physical properties8%

H10HInorganic light-emitting semiconductor devices having potential barriers8%

H10NElectric solid-state devices not otherwise provided for8%

Y10TTechnical subjects covered by former us classification8%

B01LChemical or physical laboratory apparatus for general use6%

B04BCentrifuges6%

B82YSpecific uses or applications of nanostructures6%

C30BSingle-crystal growth6%

PatentTitleYear

10,842,928Adapter for blood dispensing2020 10,639,625Pipette tip and liquid injection method2020 10,101,318Measurement apparatus2018 10,092,910Container for centrifugal separation and its production method2018 7,309,948'Ultrasonic transducer and method of manufacturing the same'2007 7,199,509'Multilayered structure and method of manufacturing the same, and ultrasonic transducer'2007 7,061,166'Laminated structure and method of manufacturing the same'2006 7,054,135'Multilayered structure, multilayered structure array and method of manufacturing the same'2006 6,999,486'Semiconductor laser element and semiconductor laser'2006 6,901,100'Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection'2005 6,888,866'Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof'2005 6,859,478'Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer'2005 6,797,416'GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits'2004 6,744,797'Semiconductor laser device'2004 6,738,403'Semiconductor laser element and semiconductor laser'2004 6,709,513'Substrate including wide low-defect region for use in semiconductor element'2004 6,541,291'Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer'2003 6,268,230'Semiconductor light emitting device'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2007Patents assigned to FUJI PHOTO FILM CO LTD (13)· patent assignee history

2001–2020Based in Kanagawa, JP· patent location history

2003–2007Based in Kaisei-machi, JP· patent location history

2007–2020Patents assigned to FUJIFILM CORP (5)· patent assignee history

2018–2020Based in Ashigarakami-gun, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJI PHOTO FILM CO LTD	13	2001–2007
FUJIFILM CORP	5	2007–2020

Locations

Location	Patents	Span
Kaisei-machi, JP	13	2003–2007
Ashigarakami-gun, JP	3	2018–2020
Kanagawa, JP	2	2001–2020