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Inventor

EMMANUEL ROLLAND

Inventor
FR

Overview

2→
Patents
2023–2024
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H01QAntennas, i.e. radio aerials10%
H03HImpedance networks, e.g. resonant circuits10%
H10DInorganic electric semiconductor devices10%
H10NElectric solid-state devices not otherwise provided for10%
PatentTitleYear
12,119,258Semiconductor structure comprising a buried porous layer for RF applications202411,848,191RF substrate structure and method of production2023

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2023–2024Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (2)· patent assignee history
2023–2024Based in FR· patent location history
2024Patents assigned to SOITEC SILICON ON INSULATOR (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
COMMISSARIAT ENERGIE ATOMIQUE22023–2024
SOITEC SILICON ON INSULATOR12024
Locations
LocationPatentsSpan
FR22023–2024