Inventor
Kenichi Yoshimochi
Inventor
Kyoto, JP
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H05KPrinted circuits7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
LOC132%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
PatentTitleYear
11,133,399Semiconductor device202111,081,433Semiconductor device202110,868,164Nitride semiconductor device202010,804,361Nitride semiconductor device202010,600,744Semiconductor device2020D0832227Semiconductor module2018D0832228Semiconductor module20189,837,525Semiconductor device and method for manufacturing same20179,653,389'High efficiency module'20179,614,073'Semiconductor device, and manufacturing method for same'20179,576,841'Semiconductor device and manufacturing method'20179,490,242'Semiconductor device and semiconductor package'20169,450,087'Semiconductor device, and manufacturing method for same'20169,431,329'High efficiency module'20169,368,612'Semiconductor device with diode trench and schottky electrode'20169,362,352'Semiconductor device and manufacturing method'20169,269,656'High efficiency module'20169,230,893'High efficiency module including a plurality of MOSFETS'20169,202,891'Semiconductor device and method for manufacturing same'20159,129,982'Semiconductor device and manufacturing method'20159,123,535'Semiconductor device and semiconductor package'20159,076,885'Manufacturing method of semiconductor device'20159,041,100'Semiconductor device, and manufacturing method for same'20158,994,066'Manufacturing method of semiconductor device'20158,928,049'High efficiency module'20158,928,072'Semiconductor device'20158,889,493'Manufacturing method of semiconductor device'20148,772,827'Semiconductor device and manufacturing method'20148,435,860'Trench type semiconductor device and fabrication method for the same'20138,390,041'High efficiency module'20138,193,579'Trench type semiconductor device and fabrication method for the same'20128,125,025'Semiconductor device'20127,535,075'Semiconductor device'20097,470,589'Semiconductor device'20087,459,749'High speed power mosfet'20087,276,772'Semiconductor device'20077,259,424'Semiconductor device having a trench with a step-free insulation film'20077,205,628'Semiconductor device'20077,166,891'Semiconductor device with etch resistant electrical insulation layer between gate electrode and source electrode'20077,091,555'Semiconductor device for switching'20066,833,304'Semiconductor device and manufacturing method thereof'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2021Patents assigned to ROHM CO LTD (41)· patent assignee history
2004–2021Based in Kyoto, JP· patent location history
2012–2015Patents assigned to YOSHIMOCHI KENICHI (7)· patent assignee history
2021Based in Kyoto-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ROHM CO LTD | 41 | 2004–2021 |
| YOSHIMOCHI KENICHIself | 7 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 40 | 2004–2021 |
| Kyoto-shi, JP | 1 | 2021 |