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Inventor

Katsuo Yoshizawa

Inventor
Nagano, JP

Overview

3→
Patents
1997–2003
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1043%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1029%
Y02PClimate change mitigation technologies in the production or processing of goods14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
PatentTitleYear
6,534,384'Method for manufacturing SOI wafer including heat treatment in an oxidizing atmosphere'20035,918,139'Method of manufacturing a bonding substrate'19995,650,353'Method for production of SOI substrate'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2003Patents assigned to SHINETSU HANDOTAI KK (3)· patent assignee history
1997–2003Based in Nagano, JP· patent location history
1999Based in Kosyoku, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU HANDOTAI KK31997–2003
Locations
LocationPatentsSpan
Nagano, JP21997–2003
Kosyoku, JP11999