Inventor
Ning Ge
Inventor
Palo Alto, CA, US
Overview
Patents· 118 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B41Jprimary
B41JTypewriters17%
G11CStatic stores17%
H01LSemiconductor devices9%
H10BElectronic memory devices8%
H10NElectric solid-state devices not otherwise provided for6%
G01NInvestigating or analysing materials by determining their chemical or physical properties6%
G06FElectric digital data processing5%
G06GAnalogue computers4%
H10DInorganic electric semiconductor devices3%
G01FMeasuring volume, volume flow, mass flow or liquid level2%
PatentTitleYear
11,114,158Reducing column switch resistance errors in RRAM-based crossbar array circuits202111,107,526Controlling forming process in RRAM devices using feedback circuits202111,107,527Reducing sneak current path in crossbar array circuits202111,084,2103D printer with tuned coolant droplets202111,069,742Crossbar array circuit with parallel grounding lines202111,060,938Dual-purpose calibration system for optical pressure sensitive paint considering static and sinusoidal pressure changes, and calibration method202110,873,024Providing thermal shield to RRAM cells202010,872,926Vector-matrix multiplication accelerator implemented using folded resistive crossbars202010,852,350Defect mitigation in a crossbar-based computing environment202010,847,219Row switch resistance error reduction for RRAM crossbar array circuit202010,838,401Producing instructions that control three-dimensional printing from voxels202010,836,178Printing fluid cartridge with electrodes and method to the level of fluid in a printing fluid cartridge202010,807,373Fluid ejection device and particle detector202010,811,065Read circuitry for electrostatic discharge switching memristive element202010,804,3241T2R RRAM cell and common reactive electrode in crossbar array circuits202010,804,985Electronic device and communication method202010,802,994Caliberating a plurality of conductances of columns in memristor crossbar based computing202010,786,171Memristor code comparator to compare sensor signals to reference signals202010,724,959Substance detection202010,712,278Analyte detection package with integrated lens202010,714,179Hybrid memory devices202010,712,279Activatable surface enhanced Raman spectroscopy sensor stage202010,712,280Heated NANO finger collapse for capture of molecules in gas for sensing202010,713,548Marker with information202010,656,093Structures for surface enhanced Raman202010,648,915Substance detection device202010,648,916Nano fingers with asymmetric material composition202010,643,697Double bias memristive dot product engine for vector processing202010,618,301Semiconductor device including capacitive sensor and ion-sensitive transistor for determining level and ion-concentration of fluid202010,585,541Display202010,580,473Memcapacitive cross-bar array for determining a dot product202010,576,748Fluid reservoir with fluid property and level detection202010,571,399Analyte detection package housing202010,539,507Analyte detection package with tunable lens202010,541,026Memristive dot product engine for vector processing202010,521,711Controllable read blocking based radio-frequency identification201910,520,441Devices to detect a substance and methods of producing such a device201910,520,443Focal adjustment for analyte detection package201910,466,177Sample substance molecular bonds breakdown and SEL collection201910,458,918Substance detection device201910,444,151Surface enhanced luminescence electric field generating base201910,418,810Electrostatic discharge memristive element switching201910,403,362Split memory bank201910,378,946Ink level sensing201910,336,069Electrically-functional optical target201910,325,655Temperature compensation circuits201910,319,441Nonvolatile memory cross-bar array201910,289,423Management controller201910,262,733Memristive dot product engine for vector processing201910,249,356Memcapacitive cross-bar array for determining a dot product201910,236,063Split memory bank201910,224,335Integrated circuits201910,224,935Ratioed logic with a high impedance load201910,181,349Nonvolatile memory cross-bar array201910,173,420Printhead assembly201910,170,180Memory including bi-polar memristor201910,160,224Cartridges comprising sensors including ground electrodes exposed to fluid chambers201810,162,263Dynamic logic memcap201810,109,348Double bias memristive dot product engine for vector processing201810,096,651Resistive memory devices and arrays201810,081,178Addressing an EPROM201810,084,062Semiconductor device comprising a gate formed from a gate ring201810,082,414Ink level sensing201810,076,904Integrated circuit devices comprising memristors201810,071,552Sensing a property of a fluid201810,056,142Generating a representative logic indicator of grouped memristors201810,029,457Pre-charge line routed over pre-charge transistor201810,026,476Bi-polar memristor201810,026,894Memristors with oxide switching layers201810,026,477Selector relaxation time reduction201810,014,055Split memory bank201810,008,264Memristive cross-bar array for determining a dot product20189,987,842Printhead with a number of memristors and inverters20189,965,296Relative frame rate as display quality benchmark for remote desktop20189,953,991EPROM cell with modified floating gate20189,950,520Printhead having a number of single-dimensional memristor banks20189,947,405Memristive dot product engine with a nulling amplifier20189,934,852Sensing an output signal in a crossbar array based on a time delay between arrival of a target output and a sneak output20189,919,519'Printhead with plurality of fluid slots'20189,919,517'Addressing an EPROM on a printhead'20189,914,297'Fluid ejection device'20189,908,332'Ink property sensing on a printhead'20189,911,788'Selectors with oxide-based layers'20189,911,490'Memory controllers'20189,889,659'Printhead with a memristor'20189,870,822'Non-volatile memory element with thermal-assisted switching control'20189,864,524'Circuit that selects EPROMs individually and in parallel'20189,849,672Fluid ejection apparatus including a parasitic resistor20179,847,124Resistive elements to operate as a matrix of probabilities20179,842,646'Memristor apparatus with variable transmission delay'20179,837,147Regulating memristor switching pulses20179,793,322'Apparatus having first and second switching materials'20179,786,777'Semiconductor device and method of making same'20179,776,412'Fluid ejection device with integrated ink level sensor'20179,776,397'Addressing an EPROM on a printhead'20179,776,400'Printhead with a number of memristor cells and a parallel current distributor'20179,776,419'Fluid ejection device with ground electrode exposed to fluid chamber'20179,751,320'Printhead with separate address generator for ink level sensors'20179,707,771'Fluid ejection device with integrated ink level sensors'20179,701,115'Printheads having memories formed thereon'20179,676,187'Fluid ejection device'20179,599,500'Ink level sensor and related methods'20179,592,664'Circuit that selects EPROMs individually and in parallel'20179,487,017'Fluid ejection device with integrated ink level sensor'20169,457,571'Fluid ejection apparatuses including a substrate with a bulk layer and a epitaxial layer'20169,331,278'Forming memristors on imaging devices'20169,264,704'Frame image quality as display quality benchmark for remote desktop'20169,252,149'Device including active floating gate region area that is smaller than channel area'20169,199,460'Apparatuses including a plate having a recess and a corresponding protrusion to define a chamber'20159,144,984'Compound slot'20158,864,260'EPROM structure using thermal ink jet fire lines on a printhead'20148,774,706'Short-range wireless mobile terminal method and system'20148,744,453'Short-range wireless mobile terminal method and system'20148,693,565'Method and device for transmitting and receiving signal in wireless communication system'20148,676,120'Coupled short-range wireless mobile terminal and relay'20148,571,545'Short-range wireless relay method and system'20138,504,015'Short-range wireless relay method and system'20138,449,079'Fluid ejection device having first and second resistors'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2021Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (59)· patent assignee history
2013–2017Patents assigned to GE NING (11)· patent assignee history
2013–2020Based in Beijing, CN· patent location history
2013–2018Based in Singapore, SG· patent location history
2016–2018Patents assigned to HEWLETT PACKARD DEVELOPMENT CO LP (17)· patent assignee history
2016–2021Based in Palo Alto, CA, US· patent location history
2017–2020Patents assigned to HEWLETT PACKARD ENTPR DEV LP (23)· patent assignee history
2017–2021Based in Newark, CA, US· patent location history
2020–2021Patents assigned to TETRAMEM INC (10)· patent assignee history
2021Based in Shaanxi, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HEWLETT PACKARD DEVELOPMENT CO | 59 | 2013–2021 |
| HEWLETT PACKARD ENTPR DEV LP | 23 | 2017–2020 |
| HEWLETT PACKARD DEVELOPMENT CO LP | 17 | 2016–2018 |
| GE NINGself | 11 | 2013–2017 |
| TETRAMEM INC | 10 | 2020–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 89 | 2016–2021 |
| Newark, California, US | 11 | 2017–2021 |
| Beijing, CN | 9 | 2013–2020 |
| Singapore, SG | 8 | 2013–2018 |
| Shaanxi, CN | 1 | 2021 |