LexDanaLexDanabeta
Inventor

Seiji Nakahata

Inventor
Itami, JP

Overview

93→
Patents
1994–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 93 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10DInorganic electric semiconductor devices11%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
Y10TTechnical subjects covered by former us classification6%
C04BLime, magnesia5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H01LSemiconductor devices4%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
G01BMeasuring length, thickness or similar linear dimensions2%
PatentTitleYear
10,837,124Gallium nitride substrate202010,600,676Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device202010,458,043Gallium nitride substrate201910,443,151Gallium nitride substrate201910,078,059Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same201810,006,147Gallium nitride substrate20189,917,004'Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device'20189,570,540'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20179,368,568'Group III nitride crystal substrates and group III nitride crystal'20169,252,207'Composite substrate'20169,136,337'Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same'20159,064,706'Composite of III-nitride crystal on laterally stacked substrates'20158,872,309'Composite of III-nitride crystal on laterally stacked substrates'20148,847,363'Method for producing group III nitride crystal'20148,845,992'III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate'20148,828,140'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20148,823,142'GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)'20148,772,787'Prepared and stored GaN substrate'20148,709,923'Method of manufacturing III-nitride crystal'20148,664,085'Method of manufacturing composite substrate'20148,598,685'GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof'20138,524,575'Group III nitride crystal and method for producing the same'20138,501,592'Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate'20138,476,158'Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture'20138,421,190'Group III nitride semiconductor substrate and manufacturing method thereof'20138,404,569'Fabrication method and fabrication apparatus of group III nitride crystal substance'20138,404,042'Group-III nitride crystal composite'20138,377,204'Group III nitride single crystal and method of its growth'20138,362,521'III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device'20138,349,078'Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device'20138,304,334'III-V compound crystal and semiconductor electronic circuit element'20128,294,245'GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture'20128,283,694'GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device'20128,258,051'Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal'20128,253,162'GaN substrate and light-emitting device'20128,227,826'Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture'20128,198,177'AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same'20128,192,543'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20128,134,223'III-V compound crystal and semiconductor electronic circuit element'20128,110,484'Conductive nitride semiconductor substrate and method for producing the same'20128,101,968'Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device'20128,067,300'AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same'20118,038,794'Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device'20118,008,173'III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal'20118,002,892'Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device'20117,915,149'Gallium nitride substrate and gallium nitride layer formation method'20117,905,958'Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device'20117,901,960'Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device'20117,863,167'Method of manufacturing group III nitride crystal'20117,858,502'Fabrication method and fabrication apparatus of group III nitride crystal substance'20107,854,804'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20107,851,381'Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device'20107,834,423'Method of producing a nitride semiconductor device and nitride semiconductor device'20107,816,238'GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate'20107,811,908'Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture'20107,794,543'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20107,771,532'Nitride semiconductor substrate and method of producing same'20107,772,585'Nitride semiconductor substrate and method of producing same'20107,732,236'III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device'20107,723,142'Growth method of GaN crystal, and GaN crystal substrate'20107,713,878'Method of recovering and reproducing substrates and method of producing semiconductor wafers'20107,662,239'Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers'20107,655,960'A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same'20107,589,000'Fabrication method and fabrication apparatus of group III nitride crystal substance'20097,556,687'Gallium nitride crystal substrate and method of producing same'20097,534,295'III nitride single crystal manufacturing method'20097,534,310'Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate'20097,528,055'Method of producing a nitride semiconductor device and nitride semiconductor device'20097,485,484'Group III-V crystal'20097,473,315'AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate'20097,416,604'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20087,354,477'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20087,303,630'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20077,297,625'Group III-V crystal and manufacturing method thereof'20077,294,199'Nitride single crystal and producing method thereof'20077,112,826'Single crystal GaN substrate semiconductor device'20067,105,865'AlxInyGa1−x−yN mixture crystal substrate'20067,087,114'Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate'20066,667,184'Single crystal GaN substrate, method of growing same and method of producing same'20036,544,917'Si3N4 ceramic, Si-base composition for its production, and method for its production'20036,410,468'Si3N4 ceramic, Si-base composition for production thereof and processes for producing these'20026,284,690'Si3N4 ceramic, Si-base composition for production thereof and processes for producing these'20016,143,677'Silicon nitride sinter having high thermal conductivity and process for preparing the same'20006,001,759'Silicon nitride sintered body, method of preparing the same and nitrided compact'19995,756,411'Sintered body of silicon nitride and method of producing the same'19985,695,700'Method of preparing a ceramic porous body'19975,618,765'Ceramics porous body and method of preparing the same'19975,529,962'Aluminum nitride sintered body and method of producing the same'19965,482,905'Aluminum nitride sintered body and method of producing the same'19965,449,648'Method for preparing an aluminum nitride sintered body'19955,395,694'Aluminum nitride powder having surface layer containing oxynitride'19955,393,715'Aluminum nitride sintered body and method of preparing the same'19955,343,150'Apparatus and method for measuring a physical property of a sample using an electron spin resonance spectrum of the sample'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (92)· patent assignee history
1994–2018Based in Hyogo, JP· patent location history
1995–2020Based in Itami, JP· patent location history
2011–2014Patents assigned to NAKAHATA SEIJI (23)· patent assignee history
2011–2014Patents assigned to OKAHISA TAKUJI (7)· patent assignee history
2012–2013Patents assigned to UEMATSU KOJI (9)· patent assignee history
2012–2013Patents assigned to FUJIWARA SHINSUKE (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES921994–2020
NAKAHATA SEIJIself232011–2014
UEMATSU KOJI92012–2013
OKAHISA TAKUJI72011–2014
FUJIWARA SHINSUKE62012–2013
Locations
LocationPatentsSpan
Itami, JP701995–2020
Hyogo, JP231994–2018