Inventor
Jengping Lin
Inventor
Taoyuan County, TW
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices42%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
PatentTitleYear
6,303,491'Method for fabricating self-aligned contact hole'20016,215,546'Method of optical correction for improving the pattern shrinkage caused by scattering of the light'20016,107,175'Method of fabricating self-aligned contact'20005,966,604'Method of manufacturing MOS components having lightly doped drain structures'19995,679,602'Method of forming MOSFET devices with heavily doped local channel stops'19975,663,586'Fet device with double spacer'19975,652,160'Method of fabricating a buried contact structure with WSi.sub.x sidewall spacers'19975,641,698'Method of fabricating FET device with double spacer'19975,612,239'Use of oxide spacers formed by liquid phase deposition'19975,550,079'Method for fabricating silicide shunt of dual-gate CMOS device'19965,550,074'Process for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift mask'19965,547,900'Method of fabricating a self-aligned contact using a liquid-phase oxide-deposition process'19965,510,279'Method of fabricating an asymmetric lightly doped drain transistor device'19965,504,038'Method for selective tungsten sidewall and bottom contact formation'19965,502,009'Method for fabricating gate oxide layers of different thicknesses'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2000Patents assigned to UNITED MICROELECTRONICS CORP (12)· patent assignee history
1996Patents assigned to TOP TEAM MICROELECTRONICS CORP (1)· patent assignee history
1996–2001Based in Taoyuan County, TW· patent location history
1996–1997Based in Fonghua Village, TW· patent location history
1997–2001Based in Taoyuan, TW· patent location history
1997Based in Taiwan, CN· patent location history
2001Patents assigned to NANYA TECHNOLOGY CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 12 | 1996–2000 |
| NANYA TECHNOLOGY CORP | 2 | 2001 |
| TOP TEAM MICROELECTRONICS CORP | 1 | 1996 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taoyuan County, TW | 9 | 1996–2001 |
| Fonghua Village, TW | 3 | 1996–1997 |
| Taoyuan, TW | 2 | 1997–2001 |
| Taiwan, CN | 1 | 1997 |