LexDanaLexDanabeta
Inventor

Ji-Cheng Zhao

Inventor
Niskayuna, NY, US

Overview

66→
Patents
1999–2020
Patent span
General tagging of new technological developments
Primary field (CPC Y)

Patents· 66 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Tprimary
Y10TTechnical subjects covered by former us classification11%
Y02TClimate change mitigation technologies related to transportation10%
C23CCoating metallic material9%
F01DNon-positive displacement machines or engines, e.g. steam turbines8%
C22CAlloys8%
F05DIndexing scheme for aspects relating to non-positive-displacement machines or engines, gas-turbines or jet-propulsion plants7%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C01BNon-metallic elements4%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
PatentTitleYear
10,778,156Interstage matching network202010,763,228Compensation device for transistors20208,304,121'Primary aluminum hydride battery'20128,153,052'High-temperature composite articles and associated methods of manufacture'20128,022,760'3-way Doherty amplifier with minimum output network'20117,906,092'Methods for preparing compositions which comprise magnesium borohydride, and related materials'20117,901,491'Hydrogen storage material and related system'20117,833,473'Material for storage and production of hydrogen, and related methods and apparatus'20107,722,729'Method for repairing high temperature articles'20107,654,734'Methods and devices for evaluating the thermal exposure of a metal article'20107,622,150'Oxidation resistant coatings for molybdenum silicide-based composite articles'20097,494,619'High temperature alloys, and articles made and repaired therewith'20097,445,937'Methods for synthesis and evaluation of hydrogen storage compositions'20087,439,783'Phase-locked loop systems and methods'20087,397,283'Digital A/V transmission PHY signaling format conversion, multiplexing, and de-multiplexing'20087,392,927'Combinatorial production of material compositions from a single sample'20087,382,169'Systems and methods for reducing static phase error'20087,381,390'Method for manufacturing magnesium borohydride'20087,327,160'SERDES with programmable I/O architecture'20087,208,975'SERDES with programmable I/O architecture'20077,189,459'Turbine blade for extreme temperature conditions'20077,115,247'Hydrogen storage compositions and methods of manufacture thereof'20067,115,244'Hydrogen storage compositions and methods of manufacture thereof'20067,115,246'Hydrogen storage compositions and methods of manufacture thereof'20067,115,245'Hydrogen storage compositions and methods of manufacture thereof'20066,974,636'Protective coating for turbine engine component'20056,964,791'High-temperature articles and method for making'20056,921,586'Ni-Base superalloy having a coating system containing a diffusion barrier layer'20056,913,655'Niobium-silicide based composities resistant to high temperature oxidation'20056,861,157'Article for high temperature service and method for manufacture'20056,832,231'Multiple width random number generation'20046,825,733'Low jitter integrated phase locked loop with broad tuning range'20046,767,653'Coatings, method of manufacture, and the articles derived therefrom'20046,746,782'Diffusion barrier coatings, and related articles and processes'20046,746,783'High-temperature articles and method for making'20046,726,444'Hybrid high temperature articles and method of making'20046,720,088'Materials for protection of substrates at high temperature, articles made therefrom, and method for protecting substrates'20046,650,188'Coupling for LC-based VCO'20036,645,560'Oxidation resistant coatings for niobium-based silicide composites'20036,644,917'Smart coating system with chemical taggants for coating condition assessment'20036,640,546'Foil formed cooling area enhancement'20036,614,291'Low voltage, high speed CMOS CML latch and MUX devices'20036,607,847'Bonded niobium silicide and molybdenum silicide composite articles using brazes'20036,586,118'Bonded niobium silicide and molybdenum silicide composite articles using semi-solid brazes'20036,582,534'High-temperature alloy and articles made therefrom'20036,565,990'Bonded niobium silicide and molybdenum silicide composite articles and method of manufacture'20036,565,989'Bonded niobium silicide and molybdenum silicide composite articles using germanium and silicon based brazes'20036,554,920'High-temperature alloy and articles made therefrom'20036,525,617'Buffering for LC-based stage'20036,521,356'Oxidation resistant coatings for niobium-based silicide composites'20036,497,968'Oxidation resistant coatings for molybdenum silicide-based composite articles'20026,498,538'Low jitter integrated phase locked loop with broad tuning range'20026,492,877'Coupling for LC-based VCO'20026,475,642'Oxidation-resistant coatings, and related articles and processes'20026,429,692'High speed data sampling with reduced metastability'20026,428,910'Nb-based silicide composite compositions'20026,419,765'Niobium-silicide based composites resistant to low temperature pesting'20026,393,828'Protective coatings for turbine combustion components'20026,321,449'Method of forming hollow channels within a component'20016,306,524'Diffusion barrier layer'20016,287,644'Continuously-graded bond coat and method of manufacture'20016,276,433'Liquid metal cooled directional solidification process'20016,217,286'Unidirectionally solidified cast article and method of making'20016,146,958'Methods for making VLSI capacitors and high Q VLSI inductors using metal-filled via plugs'20005,861,647'VLSI capacitors and high Q VLSI inductors using metal-filled via plugs'19995,858,558'Nickel-base sigma-gamma in-situ intermetallic matrix composite'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2012Patents assigned to GEN ELECTRIC (48)· patent assignee history
1999–2000Patents assigned to NAT SEMICONDUCTOR CORP (2)· patent assignee history
1999–2009Based in Niskayuna, NY, US· patent location history
1999–2008Based in San Jose, CA, US· patent location history
2002–2008Patents assigned to LATTICE SEMICONDUCTOR CORP (11)· patent assignee history
2004–2012Based in Latham, NY, US· patent location history
2008Based in Saratoga, CA, US· patent location history
2012Patents assigned to ZHAO JI-CHENG (2)· patent assignee history
2020Patents assigned to INFINEON TECHNOLOGIES AG (2)· patent assignee history
2020Based in Villach, AT· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GEN ELECTRIC481999–2012
LATTICE SEMICONDUCTOR CORP112002–2008
INFINEON TECHNOLOGIES AG22020
NAT SEMICONDUCTOR CORP21999–2000
ZHAO JI-CHENGself22012
Locations
LocationPatentsSpan
Niskayuna, New York, US241999–2009
Latham, New York, US232004–2012
San Jose, California, US121999–2008
Saratoga, California, US32008
Villach, AT22020