Inventor
Peng Li
Inventor
Dalian, CN
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H02Kprimary
H02KDynamo-electric machines16%
B82YSpecific uses or applications of nanostructures8%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light8%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
A61KPreparations for medical, dental or toiletry purposes4%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations4%
B60LPropulsion of electrically-propelled vehicles4%
B61DBody details or kinds of railway vehicles4%
B61FRail vehicle suspensions, e.g. underframes, bogies or arrangements of wheel axles4%
PatentTitleYear
10,848,020Motor stator assembly, motor and electric vehicle having the same2020D0870100Tablet20199,627,990'Non-isolated symmetric self-coupling 18-pulse rectifier power supply system'20179,553,490'Motor'20179,464,972'Apparatus and procedure for in vitro measurement of a substance, nicotine, released from a smokeless tobacco product'20169,409,580'Obstacle removing and energy absorbing device and leading car of motor train unit'20169,362,798'Outer-rotor motor'20169,071,103'Color wheel driving motor and digital-light-processing projector'20158,831,150'Method and apparatus for detecting a preamble in a received signal'20146,887,981'Natural antibacterial peptide, the nucleotide sequence encoding it and the use thereof'20056,861,271'Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)'20056,645,885'Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2005Patents assigned to INST MATERIALS RESEARCH & ENG (2)· patent assignee history
2003–2005Patents assigned to UNIV SINGAPORE (2)· patent assignee history
2003–2005Based in Singapore, SG· patent location history
2005–2020Based in Shanghai, CN· patent location history
2014Patents assigned to HK APPLIED SCIENCE & TECH RES (1)· patent assignee history
2015–2017Patents assigned to NIDEC CORP (3)· patent assignee history
2015–2017Based in Dalian, CN· patent location history
2016Based in Zhengzhou, CN· patent location history
2017Patents assigned to GUANGDONG EAST POWER CO LTD (1)· patent assignee history
2017–2019Based in Guangdong, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NIDEC CORP | 3 | 2015–2017 |
| INST MATERIALS RESEARCH & ENG | 2 | 2003–2005 |
| UNIV SINGAPORE | 2 | 2003–2005 |
| GUANGDONG EAST POWER CO LTD | 1 | 2017 |
| HK APPLIED SCIENCE & TECH RES | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dalian, CN | 3 | 2015–2017 |
| Shanghai, CN | 2 | 2005–2020 |
| Guangdong, CN | 2 | 2017–2019 |
| Singapore, SG | 2 | 2003–2005 |
| Zhengzhou, CN | 1 | 2016 |