Inventor

PHONG SY NGUYEN

Inventor
US

Overview

22→
Patents
2022–2026
Patent span
Physics
Primary field (CPC G)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores44%
G06FElectric digital data processing36%
G06NComputing arrangements based on specific computational models10%
A63BApparatus for physical training, gymnastics, swimming, climbing, or fencing5%
G06KGraphical data reading3%
H03MCoding3%
PatentTitleYear
12,517,655Program command generation with dummy data generation at a memory device202612,456,502Generating semi-soft bit data during corrective read operations in memory devices202512,332,743Efficient memory use to support soft information in bit flipping decoders202512,277,978Selective and dynamic deployment of error correction code techniques in integrated circuit memory devices202512,141,437Program command generation with dummy data generation at a memory device202412,073,892Simplified operations to read memory cells coarsely programmed via interleaved two-pass data programming techniques202411,990,186One-ladder read of memory cells coarsely programmed via interleaved two-pass data programming techniques202411,984,171Selective and dynamic deployment of error correction code techniques in integrated circuit memory devices202411,869,595Memory device programming technique using fewer latches202411,830,545Data programming techniques to store multiple bits of data per memory cell with high reliability202311,726,931Artificial intelligence-enabled management of storage media access202311,699,491Double interleaved programming of a memory device in a memory sub-system202311,675,655Solid-state drive error recovery based on machine learning202311,663,079Data recovery using a combination of error correction schemes202311,568,937Memory device programming techinique using fewer latches202311,467,991Artificial intelligence-enabled management of storage media access202211,462,265Reading memory cells coarsely programmed via interleaved two-pass data programming techniques202211,456,038Simplified operations to read memory cells coarsely programmed via interleaved two-pass data programming techniques202211,442,809Double-parity raid enabling recovery of two failed data units202211,430,526Interleaved two-pass data programming techniques with reduced write amplification202211,335,407One-ladder read of memory cells coarsely programmed via interleaved two-pass data programming techniques202211,275,646Solid-state drive error recovery based on machine learning2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2026Patents assigned to MICRON TECHNOLOGY INC (17)· patent assignee history
2022–2023Patents assigned to MARVELL ASIA PTE LTD (5)· patent assignee history
2022Patents assigned to MARVELL ASIA PTE LTD REGISTRATION NO 199702379M (1)· patent assignee history
2022–2026Based in US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MICRON TECHNOLOGY INC172022–2026
MARVELL ASIA PTE LTD52022–2023
MARVELL ASIA PTE LTD REGISTRATION NO 199702379M12022
Locations
LocationPatentsSpan
US222022–2026