Inventor
Saichirou Kaneko
Inventor
Kyoto, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices70%
H01LSemiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G01RMeasuring electric variables4%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,312,339Semiconductor device20199,923,069'Nitride semiconductor device'20189,818,835'Semiconductor device'20178,507,345'Semiconductor device and manufacturing method thereof'20138,053,320'Semiconductor device and manufacturing method thereof'20118,017,996'Semiconductor device, and energy transmission device using the same'20117,759,696'High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same'20107,759,711'Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same'20107,485,895'Silicon carbide semiconductor device'20097,378,325'Semiconductor device and manufacturing method thereof'20087,301,179'Semiconductor device having a high breakdown voltage transistor formed thereon'20077,282,739'Silicon carbide semiconductor device'20077,217,950'Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same'20077,183,575'High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode'20077,173,307'Semiconductor device and manufacturing method thereof'20077,151,280'Semiconductor device'20067,138,668'Heterojunction diode with reduced leakage current'20067,071,536'Semiconductor device and manufacturing method thereof'20067,005,704'Insulated gate drive semiconductor device'20066,737,677'Wide bandgap semiconductor device and method for manufacturing the same'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2013Patents assigned to NISSAN MOTOR (13)· patent assignee history
2004–2007Based in Yokosuka, JP· patent location history
2006–2019Based in Kyoto, JP· patent location history
2006–2013Based in Mukou, JP· patent location history
2007Based in Muko, JP· patent location history
2010–2011Patents assigned to PANASONIC CORP (3)· patent assignee history
2013Patents assigned to HAYASHI TETSUYA (1)· patent assignee history
2013Patents assigned to HOSHI MASAKATSU (1)· patent assignee history
2017–2019Patents assigned to PANASONIC IP MAN CO LTD (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NISSAN MOTOR | 13 | 2004–2013 |
| PANASONIC CORP | 3 | 2010–2011 |
| PANASONIC IP MAN CO LTD | 3 | 2017–2019 |
| HAYASHI TETSUYA | 1 | 2013 |
| HOSHI MASAKATSU | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 11 | 2006–2019 |
| Mukou, JP | 5 | 2006–2013 |
| Yokosuka, JP | 3 | 2004–2007 |
| Muko, JP | 1 | 2007 |