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Inventor

Hisashi Minemoto

Inventor
Osaka, JP

Overview

46→
Patents
1991–2020
Patent span
Physics
Primary field (CPC G)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G02Fprimary
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein15%
C30BSingle-crystal growth14%
G01RMeasuring electric variables11%
Y10TTechnical subjects covered by former us classification8%
G02BOptical elements, systems or apparatus7%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
A61BDiagnosis3%
H01LSemiconductor devices3%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
PatentTitleYear
10,610,201Ultrasonic probe and ultrasonic diagnostic apparatus202010,490,729Piezoelectric element, ultrasound probe and ultrasound imaging apparatus20199,812,633'Piezoelectric composition and method for producing same, piezoelectric element/non-lead piezoelectric element and method for producing same, ultrasonic probe and diagnostic imaging device'20179,281,438'Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal'20168,916,124'Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same'20148,574,361'Group-III element nitride crystal producing method and group-III element nitride crystal'20138,231,726'Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate'20127,855,823'Acoustooptic device and optical imaging apparatus using the same'20107,794,539'Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby'20107,754,012'Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride'20107,524,691'Method of manufacturing group III nitride substrate'20097,435,295'Method for producing compound single crystal and production apparatus for use therein'20087,381,268'Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride'20087,361,220'Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method'20087,309,534'Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same'20077,288,152'Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same'20077,255,742'Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device'20077,227,172'Group-III-element nitride crystal semiconductor device'20077,221,037'Method of manufacturing group III nitride substrate and semiconductor device'20077,176,115'Method of manufacturing Group III nitride substrate and semiconductor device'20077,125,801'Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same'20066,927,909'Integrated magneto-optical modulator with optical isolator, method of manufacturing the same and optical communication system using the same'20056,912,080'Magneto-optic modulator and optical communication system using the same'20056,903,862'Ultraviolet acoustooptic device and optical imaging apparatus using the same'20056,542,647'Optical signal transmission system and magneto-optical modulator designed to establish modulation over wide range for use in the same'20036,404,190'Optical magnetic field sensor probe'20026,370,288'Optical magnetic field sensor probe'20026,333,809'Magneto-optical element'20016,215,576'Method for making a second-order nonlinear optical material, the material obtained by the method, and an optical modulation device comprising the material'20016,160,396'Optical magnetic field sensor probe'20006,037,770'Optical magnetic field sensor probe having drum lenses'20006,008,927'Optical fiber modulator having an optical fiber having a poled portion serving as an electrooptic element and method for making same'19995,835,257'Magneto-optical element and optical magnetic field sensor using the same'19985,742,157'Optical fiber magnetic-field sensor'19985,732,167'Optical fiber sensor for measuring a magnetic field or electric current and method for making the same'19985,699,461'Optical fiber sensors and method for making the same'19975,691,837'Magneto-optical element and optical magnetic field sensor using the same'19975,569,565'Hologram recording material'19965,460,754'Non-linear optical material, method of manufacturing the same and optical wavelength converter'19955,436,920'Laser device'19955,381,429'Laser device with wavelength converter using organic ionic crystal'19955,346,653'Non-linear optical material, method of manufacturing the same and optical wavelength converter'19945,347,394'Nonlinear optical materials, method of manufacturing the same, and optical wavelength converter'19945,167,000'Optical wavelength converter'19925,154,858'Nonlinear optical compound'19925,075,546'Magnetic field measurement apparatus'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (33)· patent assignee history
1991–1995Based in Kyoto, JP· patent location history
1994–2005Based in Otsu, JP· patent location history
1997–2003Based in Ootsu, JP· patent location history
2005–2020Based in Hirakata, JP· patent location history
2007–2019Based in Osaka, JP· patent location history
2009–2012Patents assigned to PANASONIC CORP (5)· patent assignee history
2012–2016Patents assigned to MINEMOTO HISASHI (4)· patent assignee history
2013–2016Patents assigned to HATAKEYAMA TAKESHI (3)· patent assignee history
2017–2020Patents assigned to KONICA MINOLTA INC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD331991–2008
PANASONIC CORP52009–2012
MINEMOTO HISASHIself42012–2016
HATAKEYAMA TAKESHI32013–2016
KONICA MINOLTA INC32017–2020
Locations
LocationPatentsSpan
Osaka, JP122007–2019
Ootsu, JP121997–2003
Hirakata, JP102005–2020
Otsu, JP61994–2005
Kyoto, JP51991–1995