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Inventor

CHUNG-YEN FENG

Inventor
TW

Overview

3→
Patents
2023–2024
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices27%
H10DInorganic electric semiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H10BElectronic memory devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
11,877,433Storage node contact structure of a memory device202411,670,713LDMOS and fabricating method of the same202311,616,139LDMOS and fabricating method of the same2023

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2023–2024Patents assigned to UNITED MICROELECTRONICS CORP (3)· patent assignee history
2023–2024Based in TW· patent location history
2024Patents assigned to FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNITED MICROELECTRONICS CORP32023–2024
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD12024
Locations
LocationPatentsSpan
TW32023–2024