Inventor
Shui-Yen Lu
Inventor
Tainan, TW
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
PatentTitleYear
10,505,007Semiconductor device having asymmetric work function metal layer201910,177,245Method of fabricating a semiconductor device201910,170,624Non-planar transistor201910,128,366Field-effect transistor201810,043,882Method of forming semiconductor device20189,978,854Fin field-effect transistor20189,929,264'Field-effect transistor and method of making the same'20189,899,491'Semiconductor device and method of forming the same'20189,761,697'Semiconductor device and method for fabricating the same'20179,755,057'Method of fabricating a semiconductor device'20179,716,165'Field-effect transistor and method of making the same'20179,685,541'Method for forming semiconductor structure'20179,627,541'Non-planar transistor and method of forming the same'20179,627,538'Fin field effect transistor and method of manufacturing the same'20179,614,034'Semiconductor structure and method for fabricating the same'20179,502,259'Semiconductor device and method for fabricating the same'20169,461,147'Semiconductor structure'20169,443,741'Etching method for reducing microloading effect'20169,443,952'Method of forming semiconductor device'20169,419,109'Semiconductor device and method for fabricating the same'20169,373,718'Etching method for forming grooves in Si-substrate and fin field-effect transistor'20169,305,847'Method of manufacturing semiconductor device having gate metal'20169,245,972'Method for manufacturing semiconductor device'20169,165,997'Semiconductor process'20158,980,701'Method of forming semiconductor device'20158,952,392'Semiconductor structure and process thereof'20158,835,243'Semiconductor process'20148,709,930'Semiconductor process'20148,592,321'Method for fabricating an aperture'20138,574,990'Method of manufacturing semiconductor device having metal gate'20138,252,650'Method for fabricating CMOS transistor'20128,026,571'Semiconductor-device isolation structure'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2019Patents assigned to UNITED MICROELECTRONICS CORP (32)· patent assignee history
2011–2016Based in Hsinchu County, TW· patent location history
2012–2015Patents assigned to LU SHUI-YEN (6)· patent assignee history
2012–2015Patents assigned to LIAO JIUNN-HSIUNG (4)· patent assignee history
2012–2015Patents assigned to LIN YI-PO (3)· patent assignee history
2012–2013Patents assigned to TSAI SHANG-YUAN (3)· patent assignee history
2015–2019Based in Tainan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 32 | 2011–2019 |
| LU SHUI-YENself | 6 | 2012–2015 |
| LIAO JIUNN-HSIUNG | 4 | 2012–2015 |
| LIN YI-PO | 3 | 2012–2015 |
| TSAI SHANG-YUAN | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 24 | 2015–2019 |
| Hsinchu County, TW | 8 | 2011–2016 |