Inventor
Rieko Nishimura
Inventor
Kanagawa, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps47%
B82YSpecific uses or applications of nanostructures19%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
G01BMeasuring length, thickness or similar linear dimensions2%
G01KMeasuring temperature2%
PatentTitleYear
10,755,893Charged particle beam writing method and charged particle beam writing apparatus202010,622,186Charged particle beam writing apparatus and charged particle beam writing method202010,586,682Method of obtaining beam deflection shape and method of obtaining arrangement angle of blanking aperture array plate202010,483,082Evaluation method, correction method, recording medium and electron beam lithography system201910,468,232Charged particle beam writing apparatus and charged particle beam writing method201910,345,724Position correction method of stage mechanism and charged particle beam lithography apparatus201910,283,314Charged particle beam writing apparatus, and charged particle beam writing method20199,997,329Evaluation method, correction method, recording medium and electron beam lithography system20189,659,746'Adjustment method for charged particle beam drawing apparatus and charged particle beam drawing method'20179,147,553'Method for acquiring settling time'20158,872,139'Settling time acquisition method'20148,803,108'Method for acquiring settling time'20148,779,379'Acquisition method of charged particle beam deflection shape error and charged particle beam writing method'20148,748,064'Charged particle beam drawing method and charged particle beam drawing apparatus'20148,183,544'Correcting substrate for charged particle beam lithography apparatus'20127,893,411'Charged-particle beam writing apparatus and charged-particle beam writing method'20117,834,333'Charged particle beam lithography system and method for evaluating the same'20107,777,205'Electron beam lithography system'20107,705,322'Charged-particle beam writing method'20107,679,068'Method of calculating deflection aberration correcting voltage and charged particle beam writing method'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to NUFLARE TECHNOLOGY INC (20)· patent assignee history
2010–2019Based in Kanagawa, JP· patent location history
2010–2020Based in Yokohama, JP· patent location history
2012–2014Patents assigned to NISHIMURA RIEKO (2)· patent assignee history
2012Patents assigned to KAMIKUBO TAKASHI (1)· patent assignee history
2012Patents assigned to TAMAMUSHI SHUICHI (1)· patent assignee history
2014Patents assigned to NAKAHASHI SATOSHI (1)· patent assignee history
2014Based in Kawasaki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NUFLARE TECHNOLOGY INC | 20 | 2010–2020 |
| NISHIMURA RIEKOself | 2 | 2012–2014 |
| KAMIKUBO TAKASHI | 1 | 2012 |
| NAKAHASHI SATOSHI | 1 | 2014 |
| TAMAMUSHI SHUICHI | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 10 | 2010–2019 |
| Yokohama, JP | 9 | 2010–2020 |
| Kawasaki, JP | 1 | 2014 |