Inventor
Bi Jang
Inventor
Yongin, KR
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1060%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
PatentTitleYear
7,910,491'Gapfill improvement with low etch rate dielectric liners'20117,754,610'Process for etching tungsten silicide overlying polysilicon particularly in a flash memory'20106,756,313'Method of etching silicon nitride spacers with high selectivity relative to oxide in a high density plasma chamber'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004Based in Seoul, KR· patent location history
2010–2011Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
2010–2011Based in Yongin, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 2 | 2010–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin, KR | 2 | 2010–2011 |
| Seoul, KR | 1 | 2004 |