Inventor
YU-HSIANG JUAN
Inventor
TW
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
C23CCoating metallic material17%
F15DFluid dynamics, i.e. methods or means for influencing the flow of gases or liquids17%
H01JElectric discharge tubes or discharge lamps17%
PatentTitleYear
12,482,671Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool202512,283,514Method and system for processing wafer202511,972,957Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2024–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 3 | 2024–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 3 | 2024–2025 |