Inventor
Gerd Strauch
Inventor
Aachen, DE
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material46%
C30BSingle-crystal growth23%
B05DProcesses for applying fluent materials to surfaces, in general8%
H01JElectric discharge tubes or discharge lamps8%
H10KOrganic electric solid-state devices8%
Y10TTechnical subjects covered by former us classification8%
PatentTitleYear
7,473,316'Method of growing nitrogenous semiconductor crystal materials'20097,294,207'Gas-admission element for CVD processes, and device'20077,201,942'Coating method'20077,056,388'Reaction chamber with at least one HF feedthrough'20066,849,241'Device and method for depositing one or more layers on a substrate'20056,786,973'Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method'20046,309,465'CVD reactor'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2009Patents assigned to AIXTRON AG (7)· patent assignee history
2001Based in Lachen, DE· patent location history
2004–2009Based in Aachen, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AIXTRON AG | 7 | 2001–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Aachen, DE | 6 | 2004–2009 |
| Lachen, DE | 1 | 2001 |