Inventor
YU-WEI JIANG
Inventor
TW
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices34%
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices22%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
12,501,700Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell region202512,484,229Memory device and method of forming the same202512,471,346Memory array isolation structures202512,464,755Integrated circuit, transistor and method of fabricating the same202512,419,054Three-dimensional memory array with local line selector202512,414,295Semiconductor memory structure and method for forming the same202512,382,639Three-dimensional memory device and method202512,376,310Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof202512,363,911Semiconductor structure and method for forming thereof202512,363,907Memory device comprising conductive pillars202512,356,628Memory device and method for making same202512,349,362High selectivity isolation structure for improving effectiveness of 3D memory fabrication202512,342,539Protective liner layers in 3D memory structure202512,336,183Three-dimensional ferroelectric random access memory devices and methods of forming202512,317,541Semiconductor device and manufacturing method thereof202512,302,562Semiconductor structure and method of forming the same202512,288,820Transistor, integrated circuit, and manufacturing method of transistor202512,272,750Memory array channel regions202512,274,077Method of forming semiconductor memory device202512,218,250Oxide semiconductor transistor structure in 3-d device and methods for forming the same202512,219,777Memory array source/drain electrode structures202512,185,5313D NOR type memory array with wider source/drain conductive lines202412,144,182Memory device and method for making same202412,096,624Semiconductor memory device and method for making the same202412,068,245Memory device, semiconductor device, and manufacturing method thereof202412,069,863Method of forming memory device comprising conductive pillars202412,058,860Memory device202412,035,534Three-dimensional memory array with local line selector202411,903,213Memory device and method for making same202411,903,214Three-dimensional ferroelectric random access memory devices and methods of forming202411,862,726Transistor, integrated circuit, and manufacturing method of transistor202411,856,781Three-dimensional memory device and method202311,785,779Method for forming a semiconductor memory structure using a liner layer as an etch stop202311,729,988Memory device comprising conductive pillars and method of forming the same202311,729,987Memory array source/drain electrode structures202311,723,199Protective liner layers in 3D memory structure202311,721,767Oxide semiconductor transistor structure in 3-D device and methods of forming the same202311,723,210High selectivity isolation structure for improving effectiveness of 3D memory fabrication202311,721,747Integrated circuit, transistor and method of fabricating the same202311,710,790Memory array channel regions202311,696,448Memory device and method of forming the same202311,672,123Three-dimensional memory array with local line selector202311,640,974Memory array isolation structures202311,569,165Memory cell array, semiconductor device including the same, and manufacturing method thereof202311,545,507Memory device and method for making same202311,257,836Dummy vertical structures for etching in 3D NAND memory and other circuits2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022Patents assigned to MACRONIX INT CO LTD (1)· patent assignee history
2022–2025Based in TW· patent location history
2023–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (45)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 45 | 2023–2025 |
| MACRONIX INT CO LTD | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 46 | 2022–2025 |