LexDanaLexDanabeta
Inventor

Chi-Ming Chen

Inventor
Zhubei City, TW

Overview

116→
Patents
1993–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 116 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices21%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
E05BLocks5%
Y10TTechnical subjects covered by former us classification5%
H01RElectrically-conductive connections3%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
H02JElectric power networks2%
LOC152%
PatentTitleYear
10,867,792High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same202010,868,136Sidewall passivation for HEMT devices202010,821,487Cleaning apparatus for concentration controller of coating machine202010,804,101Semiconductor structure having sets of III-V compound layers and method of forming2020D0882375Lock collar2020D0881678Lock escutcheon assembly2020D0881679Lock escutcheon assembly2020D0881675Lock collar2020D0881680Lock escutcheon assembly202010,622,342Stacked LED structure and associated manufacturing method2020D0880275Lock escutcheon assembly202010,522,647Sidewall passivation for HEMT devices201910,498,093Cable connector201910,483,386Semiconductor device, transistor having doped seed layer and method of manufacturing the same201910,352,542LED lamp and component, heat dissipating base and LED wireless dimming system thereof201910,329,797Lock set transmission mechanism201910,224,735Electronic device for charging and charging method thereof201910,164,038Method of implanting dopants into a group III-nitride structure and device formed201810,157,994High electron mobility transistor and method of forming the same201810,114,049Apparatus for input power detection and method thereof201810,109,736Superlattice buffer structure for gallium nitride transistors201810,109,729High electron mobility transistors201810,079,296High electron mobility transistor with indium nitride layer201810,074,537Method of forming semiconductor structure having sets of III-V compound layers201810,020,376Sidewall passivation for HEMT devices201810,014,402High electron mobility transistor (HEMT) device structure20189,899,493'High electron mobility transistor and method of forming the same'20189,890,013'Wire-winding device'20189,876,093High electron mobility transistor and method of forming the same20189,859,667'Cable connector assembly having an illumination function'20189,840,394'Wire-winding device'20179,831,721'Charging bracket for consumer electronic product'20179,818,858'Multi-layer active layer having a partial recess'20179,741,800'III-V multi-channel FinFETs'20179,685,525'Sidewall passivation for HEMT devices'20179,660,063'Semiconductor structure having sets of III-V compound layers and method of forming the same'20179,660,481'Wireless charger assembly mountable on different desks'20179,660,396'Cable connector assembly with improved indication effect'20179,627,918'Wireless charger having moveable transmitter coil'20179,620,362'Seed layer structure for growth of III-V materials on silicon'20179,548,376'Method of manufacturing a semiconductor device including a barrier structure'20179,530,685'Isolation trench through backside of substrate'20169,525,054'High electron mobility transistor and method of forming the same'20169,478,632'Method of manufacturing a semiconductor device'20169,455,341'Transistor having a back-barrier layer and method of making the same'20169,450,350'Cable connector assembly with improved luminous effect'20169,425,276'High electron mobility transistors'20169,425,301'Sidewall passivation for HEMT devices'20169,373,689'High electron mobility transistor and method of forming the same'20169,368,610'High electron mobility transistor with indium nitride layer'20169,245,991'Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing'20169,233,844'Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrate'20169,236,465'High electron mobility transistor and method of forming the same'20169,236,464'Method of forming a high electron mobility transistor'20169,224,847'High electron mobility transistor and method of forming the same'20159,202,875'High electron mobility transistor with indium nitride layer'20159,153,435'Reducing wafer distortion through a high CTE layer'20159,142,614'Isolation trench through backside of substrate'20159,142,407'Semiconductor structure having sets of III-V compound layers and method of forming the same'20159,123,671'Silicon wafer strength enhancement'20159,099,388'III-V multi-channel FinFETs'20159,093,511'Transistor having high breakdown voltage and method of making the same'20159,081,913'Integrated circuit and clock frequency control method of integrated circuit'20159,076,854'Semiconductor device'20158,975,641'Transistor having an ohmic contact by gradient layer and method of making the same'20158,974,251'Electrical connector assembly and method of manufacturing the same'20158,969,882'Transistor having an ohmic contact by screen layer and method of making the same'20158,928,120'Wafer edge protection structure'20158,912,570'High electron mobility transistor and method of forming the same'20148,901,609'Transistor having doped substrate and method of making the same'20148,895,992'High electron mobility transistor and method of forming the same'20148,893,536'Rekeyable lock cylinder'20148,884,268'Diffusion barrier layer for group III nitride on silicon substrate'20148,866,192'Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing'20148,809,910'Thick AlN inter-layer for III-nitride layer on silicon substrate'20148,803,158'High electron mobility transistor and method of forming the same'20148,791,504'Substrate breakdown voltage improvement for group III-nitride on a silicon substrate'20148,772,831'III-nitride growth method on silicon substrate'20148,723,185'Reducing wafer distortion through a high CTE layer'20148,629,531'Structure and method to reduce wafer warp for gallium nitride on silicon wafer'20148,624,326'FinFET device and method of manufacturing same'20148,519,630'Driving circuit capable of enhancing energy conversion efficiency and driving method thereof'20138,476,146'Reducing wafer distortion through a low CTE layer'20138,456,105'Driving circuit capable of enhancing energy conversion efficiency and driving method thereof'20138,448,484'Rekeyable lock cylinder'20138,419,474'Connector with improved impedance between contacts thereof'20138,364,873'Data transmission system and a programmable SPI controller'20138,186,193'Lock cylinder structure'20128,161,783'Quickly rekeyable lock cylinder and plug assembly thereof'20128,056,378'Rekeyable lock cylinder and rekeying method thereof'20118,006,525'Transmission device for a door lock'20117,980,106'Rekeyable lock cylinder, plug assembly of the same and method for rekeying the same'20117,937,976'Rekeyable lock cylinder and operating method thereof'2011D0624094'Cyliner for an air compressor'20107,763,959'Heat slug for package structure'20107,628,048'Rekeyable lock cylinder and method for rekeying the same'20097,624,606'Rekeyable lock cylinder, plug assembly of the same and method for rekeying the same'20097,448,239'Lock assembly'20087,448,240'Lock assembly'20087,420,251'Electrostatic discharge protection circuit and driving circuit for an LCD using the same'20087,397,694'Magnetic memory arrays'20087,364,467'Card edge connector with durable key'20087,357,010'Plug assembly for a door lock'20087,275,477'Piston assembly for air pump'20077,228,788'Piston structure for an air pump'20077,209,406'Memory device with rapid word line switch'20077,033,862'Method of embedding semiconductor element in carrier and embedded structure thereof'2006D0514595'Tire inflator with ski-shaped base'2006D0507799'Tire inflator'20056,857,886'Electronic card connector'20056,642,703'Peak detector and detecting method thereof'20036,574,576'Equalizer with auto-calibration and self-test'2003D0470509'Hand-carried air-compressor for car'2003D0470510'Hand-held air-compressor for car'20036,472,861'Peak detector'2002D0337898'Work table'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2016Patents assigned to CHEN CHI-MING (27)· patent assignee history
2002–2019Based in Hsinchu, TW· patent location history
2003–2006Based in Taipei, TW· patent location history
2008–2020Patents assigned to TAIWAN FU HSING IND CO LTD (20)· patent assignee history
2008–2020Based in Kaohsiung, TW· patent location history
2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (30)· patent assignee history
2013–2016Patents assigned to YU CHUNG-YI (12)· patent assignee history
2013–2020Based in Zhubei City, TW· patent location history
2015–2019Based in New Taipei, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG302013–2016
TAIWAN SEMICONDUCTOR MFG CO LTD292016–2020
CHEN CHI-MINGself271993–2016
TAIWAN FU HSING IND CO LTD202008–2020
YU CHUNG-YI122013–2016
Locations
LocationPatentsSpan
Zhubei City, TW572013–2020
Kaohsiung, TW212008–2020
New Taipei, TW112015–2019
Hsinchu, TW112002–2019
Taipei, TW42003–2006