Inventor

Anchuan Wang

Inventor

San Jose, CA, US

Overview

2003–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 122 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%

H01JElectric discharge tubes or discharge lamps22%

H01LSemiconductor devices22%

C23CCoating metallic material8%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

H10DInorganic electric semiconductor devices3%

C09KMaterials for miscellaneous applications, not provided for elsewhere2%

C23FNon-mechanical removal of metallic material from surface2%

H10BElectronic memory devices1%

H05HPlasma technique1%

PatentTitleYear

10,872,778Systems and methods utilizing solid-phase etchants2020 10,755,941Self-limiting selective etching systems and methods2020 10,692,8803D NAND high aspect ratio structure etch2020 10,615,047Systems and methods to form airgaps2020 10,497,579Water-free etching methods2019 10,468,267Water-free etching methods2019 10,465,294Oxide and metal removal2019 10,424,464Oxide etch selectivity systems and methods2019 10,424,463Oxide etch selectivity systems and methods2019 10,319,603Selective SiN lateral recess2019 10,319,600Thermal silicon etch2019 10,283,324Oxygen treatment for nitride etching2019 10,249,507Methods for selective etching of a silicon material2019 10,204,796Methods for selective etching of a silicon material using HF gas without nitrogen etchants2019 10,204,795Flow distribution plate for surface fluorine reduction2019 10,186,428Removal methods for high aspect ratio structures2019 10,170,336Methods for anisotropic control of selective silicon removal2019 10,134,581Methods and apparatus for selective dry etch2018 10,128,086Silicon pretreatment for nitride removal2018 10,062,578Methods for etch of metal and metal-oxide films2018 10,062,579Selective SiN lateral recess2018 10,026,597Hydrogen plasma based cleaning process for etch hardware2018 9,991,134Processing systems and methods for halide scavenging2018 9,887,096'Differential silicon oxide etch'2018 9,875,907Self-aligned shielding of silicon oxide2018 9,859,128'Self-aligned shielding of silicon oxide'2018 9,842,744'Methods for etch of SiN films'2017 9,837,284Oxide etch selectivity enhancement2017 9,831,097Methods for selective etching of a silicon material using HF gas without nitrogen etchants2017 9,768,034'Removal methods for high aspect ratio structures'2017 9,754,800'Selective etch for silicon films'2017 9,704,723'Processing systems and methods for halide scavenging'2017 9,659,792'Processing systems and methods for halide scavenging'2017 9,659,791'Metal removal with reduced surface roughness'2017 9,653,310'Methods for selective etching of a silicon material'2017 9,613,822'Oxide etch selectivity enhancement'2017 9,607,856'Selective titanium nitride removal'2017 9,576,788'Cleaning high aspect ratio vias'2017 9,576,809'Etch suppression with germanium'2017 9,576,815'Gas-phase silicon nitride selective etch'2017 9,564,341'Gas-phase silicon oxide selective etch'2017 9,553,102'Tungsten separation'2017 9,520,303'Aluminum selective etch'2016 9,502,258'Anisotropic gap etch'2016 9,478,432'Silicon oxide selective removal'2016 9,478,434'Chlorine-based hardmask removal'2016 9,449,845'Selective titanium nitride etching'2016 9,449,850'Processing systems and methods for halide scavenging'2016 9,449,846'Vertical gate separation'2016 9,437,451'Radical-component oxide etch'2016 9,418,858'Selective etch of silicon by way of metastable hydrogen termination'2016 9,412,608'Dry-etch for selective tungsten removal'2016 9,406,523'Highly selective doped oxide removal method'2016 9,390,937'Silicon-carbon-nitride selective etch'2016 9,384,997'Dry-etch selectivity'2016 9,378,969'Low temperature gas-phase carbon removal'2016 9,373,522'Titanium nitride removal'2016 9,368,364'Silicon etch process with tunable selectivity to SiO2 and other materials'2016 9,355,856'V trench dry etch'2016 9,355,863'Non-local plasma oxide etch'2016 9,355,862'Fluorine-based hardmask removal'2016 9,349,605'Oxide etch selectivity systems and methods'2016 9,343,272'Self-aligned process'2016 9,343,327'Methods for etch of sin films'2016 9,324,576'Selective etch for silicon films'2016 9,309,598'Oxide and metal removal'2016 9,299,583'Aluminum oxide selective etch'2016 9,299,575'Gas-phase tungsten etch'2016 9,287,134'Titanium oxide etch'2016 9,275,834'Selective titanium nitride etch'2016 9,263,278'Dopant etch selectivity control'2016 9,236,266'Dry-etch for silicon-and-carbon-containing films'2016 9,236,265'Silicon germanium processing'2016 9,209,012'Selective etch of silicon nitride'2015 9,202,708'Doped silicon oxide etch'2015 9,190,293'Even tungsten etch for high aspect ratio trenches'2015 9,184,055'Processing systems and methods for halide scavenging'2015 9,153,442'Processing systems and methods for halide scavenging'2015 9,111,877'Non-local plasma oxide etch'2015 9,093,390'Conformal oxide dry etch'2015 9,093,371'Processing systems and methods for halide scavenging'2015 9,064,816'Dry-etch for selective oxidation removal'2015 9,064,815'Methods for etch of metal and metal-oxide films'2015 9,040,422'Selective titanium nitride removal'2015 9,034,770'Differential silicon oxide etch'2015 9,023,732'Processing systems and methods for halide scavenging'2015 9,023,734'Radical-component oxide etch'2015 8,999,856'Methods for etch of sin films'2015 8,980,763'Dry-etch for selective tungsten removal'2015 8,969,212'Dry-etch selectivity'2015 8,956,980'Selective etch of silicon nitride'2015 8,951,429'Tungsten oxide processing'2015 8,921,234'Selective titanium nitride etching'2014 8,808,563'Selective etch of silicon by way of metastable hydrogen termination'2014 8,801,952'Conformal oxide dry etch'2014 8,771,536'Dry-etch for silicon-and-carbon-containing films'2014 8,771,539'Remotely-excited fluorine and water vapor etch'2014 8,765,574'Dry etch process'2014 8,679,982'Selective suppression of dry-etch rate of materials containing both silicon and oxygen'2014 8,679,983'Selective suppression of dry-etch rate of materials containing both silicon and nitrogen'2014 8,642,481'Dry-etch for silicon-and-nitrogen-containing films'2014 8,541,312'Selective suppression of dry-etch rate of materials containing both silicon and nitrogen'2013 8,497,211'Integrated process modulation for PSG gapfill'2013 8,450,191'Polysilicon films by HDP-CVD'2013 8,138,364'Transparent conducting oxide thin films and related devices'2012 7,972,968'High density plasma gapfill deposition-etch-deposition process etchant'2011 7,910,491'Gapfill improvement with low etch rate dielectric liners'2011 7,867,921'Reduction of etch-rate drift in HDP processes'2011 7,745,350'Impurity control in HDP-CVD DEP/ETCH/DEP processes'2010 7,678,715'Low wet etch rate silicon nitride film'2010 7,629,271'High stress diamond like carbon film'2009 7,628,897'Reactive ion etching for semiconductor device feature topography modification'2009 7,595,088'Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology'2009 7,524,750'Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD'2009 7,383,702'Method of forming a phosphorus doped optical core using a PECVD process'2008 7,325,419'Method of forming a phosphorus doped optical core using a PECVD process'2008 7,244,658'Low stress STI films and methods'2007 7,205,240'HDP-CVD multistep gapfill process'2007 7,080,528'Method of forming a phosphorus doped optical core using a PECVD process'2006 6,890,597'HDP-CVD uniformity control'2005 6,808,748'Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology'2004 6,667,248'Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2020Patents assigned to APPLIED MATERIALS INC (121)· patent assignee history

2003–2009Based in Fremont, CA, US· patent location history

2009–2020Based in San Jose, CA, US· patent location history

2009–2011Based in Sunnyvale, CA, US· patent location history

2012–2016Patents assigned to WANG ANCHUAN (11)· patent assignee history

2013–2014Patents assigned to LEE YOUNG S (5)· patent assignee history

2014–2016Patents assigned to ZHANG JINGCHUN (8)· patent assignee history

2014–2016Patents assigned to INGLE NITIN K (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	121	2003–2020
WANG ANCHUANself	11	2012–2016
ZHANG JINGCHUN	8	2014–2016
INGLE NITIN K	6	2014–2016
LEE YOUNG S	5	2013–2014

Locations

Location	Patents	Span
San Jose, California, US	109	2009–2020
Fremont, California, US	10	2003–2009
Sunnyvale, California, US	3	2009–2011