Inventor
Chen-Hao Chiang
Inventor
Jhubei City, TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
G06FElectric digital data processing2%
PatentTitleYear
10,867,792High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same202010,164,038Method of implanting dopants into a group III-nitride structure and device formed201810,109,729High electron mobility transistors201810,079,296High electron mobility transistor with indium nitride layer20189,939,942Touch display panel20189,899,493'High electron mobility transistor and method of forming the same'20189,548,376'Method of manufacturing a semiconductor device including a barrier structure'20179,525,054'High electron mobility transistor and method of forming the same'20169,478,632'Method of manufacturing a semiconductor device'20169,425,276'High electron mobility transistors'20169,368,610'High electron mobility transistor with indium nitride layer'20169,245,991'Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing'20169,236,464'Method of forming a high electron mobility transistor'20169,202,875'High electron mobility transistor with indium nitride layer'20159,076,854'Semiconductor device'20158,975,641'Transistor having an ohmic contact by gradient layer and method of making the same'20158,969,882'Transistor having an ohmic contact by screen layer and method of making the same'20158,912,570'High electron mobility transistor and method of forming the same'20148,901,609'Transistor having doped substrate and method of making the same'20147,981,711'Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2018Based in Hsinchu, TW· patent location history
2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (9)· patent assignee history
2014Patents assigned to CHEN CHI-MING (1)· patent assignee history
2014Patents assigned to CHIANG CHEN-HAO (1)· patent assignee history
2014–2020Based in Jhubei City, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (9)· patent assignee history
2018Patents assigned to AU OPTRONICS CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 9 | 2014–2016 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 9 | 2016–2020 |
| AU OPTRONICS CORP | 1 | 2018 |
| CHEN CHI-MING | 1 | 2014 |
| CHIANG CHEN-HAOself | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Jhubei City, TW | 18 | 2014–2020 |
| Hsinchu, TW | 2 | 2011–2018 |