Inventor
Yugo Orihashi
Inventor
Toyama, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material24%
H01LSemiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10DInorganic electric semiconductor devices9%
H10BElectronic memory devices8%
C30BSingle-crystal growth7%
B08BCleaning in general3%
PatentTitleYear
10,262,857Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201910,134,584Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201810,090,152Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium20189,997,354Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium20189,941,119Method of forming silicon layer in manufacturing semiconductor device and recording medium20189,899,211'Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium'20189,837,261Method of manufacturing semiconductor device and substrate processing method20179,691,609'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,646,826'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,540,728'Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system'20179,520,282'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20169,508,543'Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium'20169,460,916'Method of manufacturing semiconductor device and substrate processing apparatus'20169,460,911'Method of manufacturing semiconductor device and substrate processing method'20169,412,587'Method of manufacturing semiconductor device, substrate processing apparatus, gas supply system, and recording medium'20169,218,959'Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium'20159,190,298'Film forming method and recording medium for performing the method'20159,054,046'Method of manufacturing semiconductor device and method of processing substrate'20158,987,146'Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2019Patents assigned to HITACHI INT ELECTRIC INC (18)· patent assignee history
2015–2019Based in Toyama, JP· patent location history
2019Patents assigned to KOKUSAI ELECTRIC CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI INT ELECTRIC INC | 18 | 2015–2019 |
| KOKUSAI ELECTRIC CORP | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toyama, JP | 19 | 2015–2019 |