Inventor
Huan-Tsung Huang
Inventor
Hsinchu, TW
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H01LSemiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
C09GPolishing compositions3%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
G06FElectric digital data processing3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
G11CStatic stores3%
H10BElectronic memory devices3%
PatentTitleYear
11,043,151Surface treated abrasive particles for tungsten buff applications202110,679,723Direct memory characterization using periphery transistors20209,812,444'Fin-type resistor'20179,691,758'Fin-type resistor'20179,443,925'Semiconductor structure with dielectric-sealed doped region'20169,136,329'Semiconductor structure with dielectric-sealed doped region'20158,754,487'Semiconductor device with metal gate'20148,679,926'Local charge and work function engineering on MOSFET'20148,415,749'Semiconductor structure with dielectric-sealed doped region'20138,357,581'Transistor performance improving method with metal gate'20138,324,090'Method to improve dielectric quality in high-k metal gate technology'20128,030,718'Local charge and work function engineering on MOSFET'20118,012,817'Transistor performance improving method with metal gate'20117,768,072'Silicided metal gate for multi-threshold voltage configuration'20107,759,210'Method for forming a MOS device with reduced transient enhanced diffusion'20107,321,139'Transistor layout for standard cell with optimized mechanical stress effect'20086,960,512'Method for manufacturing a semiconductor device having an improved disposable spacer'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2017Based in Hsinchu, TW· patent location history
2008–2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (11)· patent assignee history
2011Based in Jhubei City, TW· patent location history
2012–2014Patents assigned to HUANG HUAN-TSUNG (4)· patent assignee history
2012–2014Patents assigned to MASUOKA YURI (3)· patent assignee history
2012–2013Patents assigned to DIAZ CARLOS H (2)· patent assignee history
2012–2014Based in Hsinchu County, TW· patent location history
2016–2017Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2020Based in Santa Clara, CA, US· patent location history
2021Based in Tainan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 11 | 2008–2015 |
| HUANG HUAN-TSUNGself | 4 | 2012–2014 |
| MASUOKA YURI | 3 | 2012–2014 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 3 | 2016–2017 |
| DIAZ CARLOS H | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 8 | 2005–2017 |
| Hsinchu County, TW | 3 | 2012–2014 |
| Jhubei City, TW | 2 | 2011 |
| Tainan, TW | 1 | 2021 |
| Santa Clara, California, US | 1 | 2020 |