Inventor
HAO-HSIUNG LIN
Inventor
TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G11CStatic stores4%
H10BElectronic memory devices4%
H10NElectric solid-state devices not otherwise provided for4%
PatentTitleYear
11,715,770Forming semiconductor structures with semimetal features202311,626,320Method for manufacturing semiconductor device, method for packaging semiconductor chip, method for manufacturing shallow trench isolation (STI)202311,605,674Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same202311,538,938Method for forming stressor, semiconductor device having stressor, and method for forming the same202211,177,368Semiconductor arrangement202111,164,972Method for forming stressor, semiconductor device having stressor, and method for forming the same202111,152,251Method for manufacturing semiconductor device having via formed by ion beam2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2021–2023Patents assigned to UNIV NAT TAIWAN (6)· patent assignee history
2021–2023Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2021–2023 |
| UNIV NAT TAIWAN | 6 | 2021–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 7 | 2021–2023 |