Inventor
Wolfgang Rosner
Inventor
Ottobrunn, DE
Overview
Patents· 57 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10BElectronic memory devices20%
B82YSpecific uses or applications of nanostructures9%
G11BInformation storage based on relative movement between record carrier and transducer9%
G11CStatic stores8%
H10KOrganic electric solid-state devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
Y10TTechnical subjects covered by former us classification3%
G06FElectric digital data processing2%
H01LSemiconductor devices2%
PatentTitleYear
11,120,834Actuators for an elevator drive202111,094,347Split ramp for data storage devices2021RE047082Multipiece deck for hard disk drive20189,818,453'Methods and devices for sealing hard drives'20179,595,619'Semiconductor device with different contact regions'20179,536,572'Apparatus with sealed cavity formed by at least one impermeable weld'20179,123,828'Semiconductor device and method for forming a semiconductor device'20158,797,679'Multipiece deck for hard disk drive'20148,363,417'PCBA low cost snap-on frame mount'20138,305,770'PCBA low cost frame mount'20128,124,475'Integrated circuit arrangement with capacitor and fabrication method'20128,097,915'Semiconductor memory device'20127,820,505'Integrated circuit arrangement with capacitor and fabrication method'20107,709,827'Vertically integrated field-effect transistor having a nanostructure therein'20107,635,867'Nanotube array and method for producing a nanotube array'20097,368,752'DRAM memory cell'20087,291,877'Integrated circuit arrangement with capacitor'20077,265,376'Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell'20077,214,582'Semiconductor substrate and semiconductor circuit formed therein and fabrication methods'20077,189,988'Molecular electronics arrangement and method for producing a molecular electronics arrangement'20077,173,302'Integrated circuit arrangement having capacitors and having planar transistors and fabrication method'20077,157,768'Non-volatile flash semiconductor memory and fabrication method'20077,019,942'Electrical feedthrough in a hermetically sealed data storage device'20067,016,145'Hermetically sealed data storage device'20066,977,413'Bar-type field effect transistor and method for the production thereof'20056,930,858'Internal support member in a hermetically sealed data storage device'20056,914,292'Floating gate field-effect transistor'20056,909,141'Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component'20056,900,495'Layer arrangement, memory cell, memory cell arrangement and method for producing a layer arrangement'20056,864,129'Double gate MOSFET transistor and method for the production thereof'20056,856,490'Flex cable assembly with improved flex cable dynamic loop characteristics'20056,730,930'Memory element and method for fabricating a memory element'20046,614,069'Nonvolatile semiconductor memory cell and method for fabricating the memory cell'20036,553,157'Optoelectronic microelectronic system'20036,490,190'Memory cell configuration, magnetic ram, and associative memory'20026,442,042'Circuit configuration having at least one nanoelectronic component and method for fabricating the component'20026,424,562'Read/write architecture for MRAM'20026,417,043'Memory cell configuration and fabrication method'20026,362,502'DRAM cell circuit'20026,337,247'Method of producing a vertical MOS transistor'20026,320,447'Circuit configuration with single-electron components, and operating method'20016,300,198'Method for producing a vertical MOS-transistor'20016,229,169'Memory cell configuration, method for fabricating it and methods for operating it'20016,037,209'Method for producing a DRAM cellular arrangement'20006,038,164'SRAM cell configuration and method for its fabrication'20005,998,261'Method of producing a read-only storage cell arrangement'19995,973,373'Read-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its production'19995,920,778'Read-only memory cell arrangement and method for its production'19995,844,834'Single-electron memory cell configuration'19985,744,393'Method for production of a read-only-memory cell arrangement having vertical MOS transistors'19985,432,115'Process for making a contact betwen a capacitor electrode disposed in a trench and an MOS transistor source/drain region disposed outside the trench'19955,398,701'Device for filling cigarette tubes'19955,270,236'Method for producing an opening in a layered semiconductor structure or a contact hole in an integrated circuit or DRAM'19934,470,234'Hollow beam constructed of boards'1984D0274559'Covering reglet'19844,439,970'Retainer for the attachment of paneling elements, paneling structure produced by using the retainer and paneling strip suitable for use of the retainer'19843,961,108'Method for treating surfaces of wood panels'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–2013Patents assigned to ROSNER WOLFGANG (6)· patent assignee history
1976–2001Based in Munich, DE· patent location history
1984Based in D-8000 Munchen 40, DE· patent location history
1993–2001Patents assigned to SIEMENS AG (10)· patent assignee history
2001–2017Patents assigned to INFINEON TECHNOLOGIES AG (27)· patent assignee history
2002–2017Based in Ottobrunn, DE· patent location history
2002Based in Mnchen, DE· patent location history
2005–2021Patents assigned to SEAGATE TECHNOLOGY LLC (12)· patent assignee history
2005–2021Based in Burnsville, MN, US· patent location history
2012–2013Patents assigned to GUNDERSON NEAL FRANK (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 27 | 2001–2017 |
| SEAGATE TECHNOLOGY LLC | 12 | 2005–2021 |
| SIEMENS AG | 10 | 1993–2001 |
| ROSNER WOLFGANGself | 6 | 1976–2013 |
| GUNDERSON NEAL FRANK | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ottobrunn, DE | 23 | 2002–2017 |
| Burnsville, Minnesota, US | 12 | 2005–2021 |
| Munich, DE | 12 | 1976–2001 |
| Mnchen, DE | 4 | 2002 |
| D-8000 Munchen 40, DE | 2 | 1984 |