Inventor
John C. Bean
Inventor
New Providence, NJ, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G11CStatic stores7%
B82YSpecific uses or applications of nanostructures5%
C23CCoating metallic material2%
C30BSingle-crystal growth2%
G02BOptical elements, systems or apparatus2%
G11BInformation storage based on relative movement between record carrier and transducer2%
PatentTitleYear
10,297,707Thin film photovoltaic cell system and method of manufacture20195,244,749'Article comprising an epitaxial multilayer mirror'19935,134,090'Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy'19925,096,840'Method of making a polysilicon emitter bipolar transistor'19925,091,767'Article comprising a lattice-mismatched semiconductor heterostructure'1992RE033693'Device using ordered semiconductor alloy'19914,879,256'Method of controlling the order-disorder state in a semiconductor device'19894,861,393'Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy'19894,772,924'Device having strain induced region of altered bandgap'19884,725,870'Silicon germanium photodetector'19884,681,773'Apparatus for simultaneous molecular beam deposition on a plurality of substrates'19874,661,829'Device using ordered semiconductor alloy'19874,554,045'Method for producing metal silicide-silicon heterostructures'19854,529,455'Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy'19854,514,748'Germanium p-i-n photodetector on silicon substrate'19854,492,971'Metal silicide-silicon heterostructures'1985Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1985–1993Patents assigned to AT & T BELL LAB (9)· patent assignee history
1985–1993Based in New Providence, NJ, US· patent location history
1987–1989Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (4)· patent assignee history
1988–2019Patents assigned to BEAN JOHN C (2)· patent assignee history
2019Patents assigned to ALIJABBARI NASER (1)· patent assignee history
2019Patents assigned to CAMPBELL JOE C (1)· patent assignee history
2019Based in Charlottesville, VA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AT & T BELL LAB | 9 | 1985–1993 |
| AMERICAN TELEPHONE & TELEGRAPH | 4 | 1987–1989 |
| BEAN JOHN Cself | 2 | 1988–2019 |
| ALIJABBARI NASER | 1 | 2019 |
| CAMPBELL JOE C | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| New Providence, New Jersey, US | 15 | 1985–1993 |
| Charlottesville, Virginia, US | 1 | 2019 |