Inventor

Sony Varghese

Inventor
Manchester, MA, US

Overview

26→
Patents
2015–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10DInorganic electric semiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01JElectric discharge tubes or discharge lamps5%
H10BElectronic memory devices4%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
B82YSpecific uses or applications of nanostructures2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
11,101,183Gate spacer formation for scaled CMOS devices202111,037,788Integration of device regions202111,018,138Methods for forming dynamic random-access devices by implanting a drain through a spacer opening at the bottom of angled structures202110,811,304Increased isolation of diffusion breaks in FinFET devices using an angled etch202010,763,155Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions202010,720,357Method of forming transistor device having fin cut regions202010,692,872Device structure for forming semiconductor device having angled contacts202010,692,775Fin damage reduction during punch through implantation of FinFET device202010,685,865Method and device for power rail in a fin type field effect transistor202010,686,033Fin damage reduction during punch through implantation of FinFET device202010,644,117Techniques for contact formation in self-aligned replacement gate device202010,629,437Techniques and structure for forming dynamic random-access device using angled ions202010,615,069Semiconductor structures comprising polymeric materials202010,607,847Gate all around device and method of formation using angled ions202010,607,999Techniques and structure for forming dynamic random access device202010,580,651Integration of device regions202010,510,870Techniques for forming device having etch-resistant isolation oxide201910,510,610Structure and method of forming fin device having improved fin liner201910,403,552Replacement gate formation with angled etch and deposition201910,403,738Techniques for improved spacer in nanosheet device201910,153,195Semiconductor constructions comprising dielectric material201810,103,134Methods of manufacturing multi-die semiconductor device packages and related assemblies20189,865,578'Methods of manufacturing multi-die semiconductor device packages and related assemblies'20189,761,474'Methods for processing semiconductor devices'20179,412,706'Engineered carrier wafers'20169,153,451'Method of forming a planar surface for a semiconductor device structure, and related methods of forming a semiconductor device structure'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2020Patents assigned to MICRON TECHNOLOGY INC (8)· patent assignee history
2015–2020Based in Boise, ID, US· patent location history
2018–2020Based in Manchester-by-the-Sea, MA, US· patent location history
2019–2021Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (12)· patent assignee history
2019–2021Based in Manchester, MA, US· patent location history
2020–2021Patents assigned to APPLIED MATERIALS INC (6)· patent assignee history
2020–2021Based in Santa Clara, CA, US· patent location history
2021Based in Manchester, NH, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC122019–2021
MICRON TECHNOLOGY INC82015–2020
APPLIED MATERIALS INC62020–2021
Locations
LocationPatentsSpan
Manchester, Massachusetts, US152019–2021
Boise, ID, US62015–2020
Santa Clara, California, US22020–2021
Manchester-by-the-Sea, Massachusetts, US22018–2020
Manchester, NH, US12021