Inventor

Nurul Amin

Inventor
Woodbury, MN, US

Overview

63→
Patents
1992–2016
Patent span
Physics
Primary field (CPC G)

Patents· 63 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer36%
Y10TTechnical subjects covered by former us classification15%
B82YSpecific uses or applications of nanostructures10%
G11CStatic stores9%
H10BElectronic memory devices8%
H10NElectric solid-state devices not otherwise provided for8%
G01RMeasuring electric variables3%
B24BMachines, devices, or processes for grinding or polishing2%
H01FMagnets2%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
9,441,938'Test structures for measuring near field transducer disc length'20169,361,916'Electrical lapping guide for dimensional control of back side of heat assisted magnetic recording device'20169,087,537'System for adjusting lapping of a transducer using a disk windage'20158,772,122'Programmable metallization memory cell with layered solid electrolyte structure'20148,767,456'Multi-bit memory with selectable magnetic layer'20148,758,083'Method and system for adjusting lapping of a transducer using a disk windage'20148,487,291'Programmable metallization memory cell with layered solid electrolyte structure'20138,446,752'Programmable metallization cell switch and memory units containing the same'20138,343,801'Method of forming a programmable metallization memory cell'20138,298,611'Discrete track media'20128,288,753'Programmable resistive memory cell with oxide layer'20128,289,751'Non-volatile memory cell with programmable unipolar switching element'20128,286,333'Method of manufacturing a magnetic head'20128,288,749'Schottky diode switch and memory units containing the same'20128,248,836'Non-volatile memory cell stack with dual resistive elements'20128,203,870'Flux programmed multi-bit magnetic memory'20128,203,875'Anti-parallel diode structure and method of fabrication'20128,198,181'Schottky diode switch and memory units containing the same'20128,199,570'Multi-bit memory with selectable magnetic layer'20128,158,964'Schottky diode switch and memory units containing the same'20128,098,455'Wire-assisted magnetic write device with phase shifted current'20128,058,646'Programmable resistive memory cell with oxide layer'20117,974,117'Non-volatile memory cell with programmable unipolar switching element'20117,965,589'Recordable disc and motor'20117,957,091'Recordable disc with fluid bearing features'20117,911,833'Anti-parallel diode structure and method of fabrication'20117,835,110'MEMS disc drive'20107,826,171'Interconnect architecture for disc drive array'20107,810,373'MEMS shock sensors'20107,684,150'Recording head for reducing side track erasure'20107,561,380'Transducing head including a magnetic element exhibiting varying permeability'20097,554,765'Magnetic head for perpendicular recording with suppressed side writing and erasing'20097,509,748'Magnetic MEMS sensors'20097,474,499'Shielded enclosure of a disc drive for reducing penetration and influence of stray fields'20097,440,213'Apparatus and method for controlling remnant magnetization in a magnetic recording head'20087,382,575'Transducing head including a magnetic element exhibiting varying permeability'20087,310,202'Magnetic recording head with clad coil'20077,298,587'Rounded top pole'20077,100,266'Method of forming a beveled writing pole of a perpendicular writing element'20067,102,854'Transducing head with reduced side writing'20067,016,160'Differential CPP reader for perpendicular magnetic recording'20066,898,053'Perpendicular recording head with trackwidth defined by plating thickness'20056,795,280'Tunneling magneto-resistive read head with two-piece free layer'20046,788,496'Narrow top pole of a write element'20046,724,584'Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation'20046,521,335'Method of fabricating a submicron narrow writer pole'20036,510,030'Transducing head and method for forming a recessed shield for a transducing head'20036,469,878'Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation'20026,462,919'Spin valve sensor with exchange tabs'20026,456,467'Laminated shields with antiparallel magnetizations'20026,417,990'Composite core structure for high efficiency writer'20026,256,176'Highly sensitive spin valve heads using a self-aligned demag-field balance element'20016,003,361'System for predicting accurate MR sensor height'19995,764,056'Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors'19985,742,995'Method to predict an accurate MR sensor dimension when viewed from abs'19985,699,605'Method for forming a magnetic thin film head with recessed basecoat'19975,406,434'Thin film head with contoured pole face edges for undershoot reduction'19955,373,624'Leading edge undershoot elimination in thin film heads'19945,200,056'Method for aligning pole tips in a thin film head'19935,181,152'Leading edge undershoot elimination in thin film heads'19935,141,623'Method for aligning pole tips in a thin film head'19925,137,750'Method of making a thin film head with contoured pole face edges for undershoot reduction'19925,084,957'Method for aligning thin film head pole tips'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2010Patents assigned to SEAGATE TECHNOLOGY (13)· patent assignee history
1992–2004Based in Burnsville, MN, US· patent location history
2001–2014Patents assigned to SEAGATE TECHNOLOGY LLC (46)· patent assignee history
2002–2006Based in St. Paul, MN, US· patent location history
2006–2014Based in Woodbury, MN, US· patent location history
2011–2014Patents assigned to AMIN NURUL (18)· patent assignee history
2011–2013Patents assigned to JIN INSIK (10)· patent assignee history
2011–2013Patents assigned to SUN MING (8)· patent assignee history
2014–2016Based in Fremont, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEAGATE TECHNOLOGY LLC462001–2014
AMIN NURULself182011–2014
SEAGATE TECHNOLOGY131992–2010
JIN INSIK102011–2013
SUN MING82011–2013
Locations
LocationPatentsSpan
Woodbury, Minnesota, US362006–2014
Burnsville, Minnesota, US181992–2004
St. Paul, Minnesota, US52002–2006
Fremont, California, US42014–2016