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Inventor

Fang-Ling Nien

Inventor
Hsinchu, TW

Overview

2→
Patents
2014–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

F16Cprimary
F16CShafts17%
F16HGearing17%
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
Y10TTechnical subjects covered by former us classification17%
PatentTitleYear
11,088,262Radical etching in gate formation20218,888,374'Bearing with antiskid design'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014Patents assigned to HIWIN TECH CORP (1)· patent assignee history
2014Based in Taichung, TW· patent location history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (1)· patent assignee history
2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HIWIN TECH CORP12014
TAIWAN SEMICONDUCTOR MFG CO LTD12021
Locations
LocationPatentsSpan
Hsinchu, TW12021
Taichung, TW12014