Inventor
Teruaki Okino
Inventor
Kamakura, JP
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps40%
B82YSpecific uses or applications of nanostructures31%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
G21KHandling of particles or ionising radiation not otherwise provided for1%
PatentTitleYear
6,936,831'Divided reticles for charged-particle-beam microlithography apparatus, and methods for using same'20056,894,291'Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system'20056,815,693'Charged-particle-beam microlithography apparatus and methods including proximity-effect correction'20046,680,481'Mark-detection methods and charged-particle-beam microlithography methods and apparatus comprising same'20046,664,551'Methods for detecting incidence orthogonality of a patterned beam in charged-particle-beam (CPB) microlithography, and CPB microlithography systems that perform same'20036,657,207'Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures'20036,541,169'Methods for charged-particle-beam microlithography including correction of deflection aberrations, and device-manufacturing methods comprising same'20036,447,964'Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate'20026,376,137'Charged-particle-beam microlithography apparatus and methods including correction of stage-positioning errors using a deflector'20026,362,489'Charged-particle-beam microlithography methods exhibiting reduced thermal deformation of mark-defining member'20026,307,209'Pattern-transfer method and apparatus'20016,277,542'Charged-particle-beam projection-exposure methods exhibiting more uniform beam-current density'20016,258,511'Charged particle beam exposure method utilizing partial exposure stitch area'20016,207,962'Charged-particle-beam microlithography apparatus and methods exhibiting reduced thermal deformation of mark-defining member'20016,194,732'Charged-particle-beam exposure methods with beam parallelism detection and correction'20016,162,581'Charged particle beam pattern-transfer method utilizing non-uniform dose distribution in stitching region'20006,151,101'Charged-particle-beam projection-exposure apparatus and methods exhibiting increased throughtput'20006,072,184'Charged-particle-beam projection methods'20006,027,843'Charged-particle-beam microlithography methods including correction of imaging faults'20005,989,753'Method, apparatus, and mask for pattern projection using a beam of charged particles'19995,981,947'Apparatus for detecting or collecting secondary electrons, charged-particle beam exposure apparatus comprising same, and related methods'19995,973,333'Charged-particle-beam pattern-transfer apparatus and methods'19995,933,217'Electron-beam projection-microlithography apparatus and methods'19995,929,457'Charged particle beam transfer apparatus'19995,914,493'Charged-particle-beam exposure apparatus and methods with substrate-temperature control'19995,912,469'Charged-particle-beam microlithography apparatus'19995,912,467'Method and apparatus for measurement of pattern formation characteristics'19995,888,699'Pattern transfer method and transfer apparatus by charged particle beam'19995,879,842'Pattern projection method with charged particle beam utilizing continuous movement of mask and substrate'19995,874,198'Charged particle beam transfer method'19995,856,677'Pattern projection method with charged particle beam and charged particle beam projection system'19995,817,442'Pattern projection method with charged particle beam utilizing continuous movement to perform projection'19985,798,196'Pattern transfer method utilizing distribution condition evaluation by charged particle beam'19985,789,119'Image transfer mask for charged particle-beam'19985,700,604'Charged particle beam exposure method and mask employed therefor'19975,624,774'Method for transferring patterns with charged particle beam'19975,567,949'Charged particle beam transfer apparatus'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2005Patents assigned to NIKON CORP (37)· patent assignee history
1996–1999Based in Kanagawa, JP· patent location history
1998–2005Based in Kamakura, JP· patent location history
1999Based in Kamakur, JP· patent location history
2005Based in Kyoko, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NIKON CORP | 37 | 1996–2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kamakura, JP | 28 | 1998–2005 |
| Kanagawa, JP | 7 | 1996–1999 |
| Kyoko, JP | 1 | 2005 |
| Kamakur, JP | 1 | 1999 |