LexDanaLexDanabeta
Inventor

Yanning Sun

Inventor
Scarsdale, NY, US

Overview

44→
Patents
2011–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
B82YSpecific uses or applications of nanostructures1%
C25DProcesses for the electrolytic or electrophoretic production of coatings1%
PatentTitleYear
11,124,890Method for measuring concentrations of metal ion in electrodeposition solutions202110,622,207Low external resistance channels in III-V semiconductor devices202010,128,343III-V MOSFET with self-aligned diffusion barrier201810,115,833Self-aligned heterojunction field effect transistor201810,014,377III-V field effect transistor on a dielectric layer20189,984,873Preparation of low defect density of III-V on Si for device fabrication20189,947,755III-V MOSFET with self-aligned diffusion barrier20189,941,363III-V transistor device with self-aligned doped bottom barrier20189,882,021'Planar III-V field effect transistor (FET) on dielectric layer'20189,853,109III-V MOSFET with self-aligned diffusion barrier20179,812,323'Low external resistance channels in III-V semiconductor devices'20179,793,405'Semiconductor lateral sidewall growth from a semiconductor pillar'20179,773,903'Asymmetric III-V MOSFET on silicon substrate'20179,741,871'Self-aligned heterojunction field effect transistor'20179,722,031'Reduced current leakage semiconductor device'20179,711,648'Structure and method for CMP-free III-V isolation'20179,704,958'III-V field effect transistor on a dielectric layer'20179,666,684'III-V semiconductor device having self-aligned contacts'20179,627,266'Dual-semiconductor complementary metal-oxide-semiconductor device'20179,627,482'Reduced current leakage semiconductor device'20179,608,066'High-K spacer for extension-free CMOS devices with high mobility channel materials'20179,570,296'Preparation of low defect density of III-V on Si for device fabrication'20179,553,166'Asymmetric III-V MOSFET on silicon substrate'20179,508,550'Preparation of low defect density of III-V on Si for device fabrication'20169,508,640'Multiple via structure and method'20169,437,614'Dual-semiconductor complementary metal-oxide-semiconductor device'20169,397,161'Reduced current leakage semiconductor device'20169,337,281'Planar semiconductor growth on III-V material'20169,324,853'III-V semiconductor device having self-aligned contacts'20169,287,115'Planar III-V field effect transistor (FET) on dielectric layer'20169,159,822'III-V semiconductor device having self-aligned contacts'20159,105,571'Interface engineering to optimize metal-III-V contacts'20159,093,532'Overlapped III-V finFET with doped semiconductor extensions'20159,087,775'Planar semiconductor growth on III-V material'20159,064,946'III-V FET device with overlapped extension regions using gate last'20159,059,288'Overlapped III-V finfet with doped semiconductor extensions'20159,059,267'III-V device with overlapped extension regions using replacement gate'20159,041,061'III-V device with overlapped extension regions using replacement gate'20159,041,060'III-V FET device with overlapped extension regions using gate last'20158,937,299'III-V finFETs on silicon substrate'20158,895,352'Method to improve nucleation of materials on graphene and carbon nanotubes'20148,859,316'Schottky junction si nanowire field-effect bio-sensor/molecule detector'20148,816,333'Method to improve nucleation of materials on graphene and carbon nanotubes'20147,964,896'Buried channel MOSFET using III-V compound semiconductors and high k gate dielectrics'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2020Patents assigned to IBM (39)· patent assignee history
2011–2014Based in White Plains, NY, US· patent location history
2014–2015Patents assigned to SUN YANNING (4)· patent assignee history
2014Patents assigned to BABICH KATHERINA (2)· patent assignee history
2014Patents assigned to CALLEGARI ALESSANDRO (2)· patent assignee history
2014–2020Based in Scarsdale, NY, US· patent location history
2014Based in Yorktown Heights, NY, US· patent location history
2016–2017Patents assigned to GLOBALFOUNDRIES INC (4)· patent assignee history
2021Based in Hong Kong, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM392011–2020
GLOBALFOUNDRIES INC42016–2017
SUN YANNINGself42014–2015
BABICH KATHERINA22014
CALLEGARI ALESSANDRO22014
Locations
LocationPatentsSpan
Scarsdale, New York, US402014–2020
White Plains, New York, US22011–2014
Hong Kong, CN12021
Yorktown Heights, New York, US12014