Inventor
Kohji Matsunaga
Inventor
Tokyo, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H01PWaveguides13%
H03FAmplifiers13%
H05BElectric heating13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
PatentTitleYear
7,863,648'Field effect transistor'20117,800,131'Field effect transistor'20107,518,468'Power divider-combiner circuit'20096,765,241'Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances'20046,441,391'Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate'20026,166,604'Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic'20005,084,131'Fabrication method for thin film electroluminescent panels'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (1)· patent assignee history
1992Based in Katano, JP· patent location history
2000–2011Patents assigned to NEC CORP (6)· patent assignee history
2000–2011Based in Tokyo, JP· patent location history
2004Based in Minato-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 6 | 2000–2011 |
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 1 | 1992 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 5 | 2000–2011 |
| Minato-ku, JP | 1 | 2004 |
| Katano, JP | 1 | 1992 |