Inventor
Gordon B. Spellman
Inventor
Mequon, WI, US
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices16%
H03KPulse technique14%
G01KMeasuring temperature9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H05GX-ray technique7%
G05DSystems for controlling or regulating non-electric variables5%
H05HPlasma technique5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
F23QIgnition3%
H01HElectric switches3%
PatentTitleYear
6,144,288'Remote wireless switch sensing circuit using RF transceiver in combination with a SAW chirp processor'20005,951,276'Electrically enhanced hot surface igniter'19995,637,843'Electromechanical programmer/timer'19975,471,032'Electrical resistance ignitor with spaced parallel filaments brazed in refractory block recesses'19954,633,492'Plasma pinch X-ray method'19864,624,533'Solid state display'19864,618,971'X-ray lithography system'19864,536,884'Plasma pinch X-ray apparatus'19854,529,998'Amplified gate thyristor with non-latching amplified control transistors across base layers'19854,516,144'Columnated and trimmed magnetically sensitive semiconductor'19854,504,964'Laser beam plasma pinch X-ray system'19854,458,287'Thermally protected semiconductor with accurate phase control'19844,398,205'Gate turn-off device with high turn-off gain'19834,355,322'Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor'19824,323,793'Thyristor having widened region of temperature sensitivity with respect to breakover voltage'19824,295,058'Radiant energy activated semiconductor switch'19814,268,846'Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion'1981RE030514'Thermally self-protected power switching semiconductor device'19814,213,067'Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path'19804,206,646'Transducer combining comparator or converter function with sensor function'19804,187,513'Solid state current limiter'19804,185,253'Temperature sensitive relaxation oscillator'19804,184,126'Temperature sensitive astable multivibrator'19804,132,933'Electromechanical chopper for speed control of battery powered devices'19794,112,458'Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50.degree. C'19784,087,848'Thermally self-protected power switching semiconductor device'19784,050,083'Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version'19773,971,056'Semiconductor temperature switches'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–1979Patents assigned to CUTLER HAMMER INC (5)· patent assignee history
1976–1985Based in Milwaukee, WI, US· patent location history
1977–2000Based in Mequon, WI, US· patent location history
1980–2000Patents assigned to EATON CORP (20)· patent assignee history
1982Patents assigned to JASKOLSKI STANLEY V (1)· patent assignee history
1982Patents assigned to SCHUTTEN HERMAN P (1)· patent assignee history
1982Patents assigned to SPELLMAN GORDON B (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EATON CORP | 20 | 1980–2000 |
| CUTLER HAMMER INC | 5 | 1976–1979 |
| JASKOLSKI STANLEY V | 1 | 1982 |
| SCHUTTEN HERMAN P | 1 | 1982 |
| SPELLMAN GORDON Bself | 1 | 1982 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mequon, WI, US | 25 | 1977–2000 |
| Milwaukee, WI, US | 3 | 1976–1985 |