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Inventor

Peter Loewenhardt

Inventor
Pleasanton, CA, US

Overview

59→
Patents
1995–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps41%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
C23CCoating metallic material3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B24BMachines, devices, or processes for grinding or polishing2%
G01RMeasuring electric variables2%
H10DInorganic electric semiconductor devices2%
A61LMethods or apparatus for sterilising materials or objects in general1%
B09BDisposal of solid waste not otherwise provided for1%
PatentTitleYear
8,801,892'Uniform etch system'20148,573,153'Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode'20138,430,970'Methods for preventing corrosion of plasma-exposed yttria-coated constituents'20138,337,713'Methods for RF pulsing of a narrow gap capacitively coupled reactor'20127,976,673'RF pulsing of a narrow gap capacitively coupled reactor'20117,861,667'Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode'20117,601,246'Methods of sputtering a protective coating on a semiconductor substrate'20097,597,816'Wafer bevel polymer removal'20097,385,287'Preventing damage to low-k materials during resist stripping'20087,371,332'Uniform etch system'20087,363,876'Multi-core transformer plasma source'20087,294,580'Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition'20077,244,336'Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift'20077,226,852'Preventing damage to low-k materials during resist stripping'20077,211,518'Waferless automatic cleaning after barrier removal'20077,169,231'Gas distribution system with tuning gas'20077,078,350'Methods for the optimization of substrate etching in a plasma processing system'20067,041,230'Method for selectively etching organosilicate glass with respect to a doped silicon carbide'20066,979,579'Methods and apparatus for inspecting contact openings in a plasma processing system'20056,949,469'Methods and apparatus for the optimization of photo resist etching in a plasma processing system'20056,949,460'Line edge roughness reduction for trench etch'20056,841,943'Plasma processor with electrode simultaneously responsive to plural frequencies'20056,822,185'Temperature controlled dome-coil system for high power inductively coupled plasma systems'20046,755,150'Multi-core transformer plasma source'20046,744,212'Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions'20046,712,020'Toroidal plasma source for plasma processing'20046,673,199'Shaping a plasma with a magnetic field to control etch rate uniformity'20046,581,612'Chamber cleaning with fluorides of iodine'20036,569,775'Method for enhancing plasma processing performance'20036,566,272'Method for providing pulsed plasma during a portion of a semiconductor wafer process'20036,558,564'Plasma energy control by inducing plasma instability'20036,508,198'Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer'20036,503,367'Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma'20036,475,335'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'20026,471,822'Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma'20026,449,871'Semiconductor process chamber having improved gas distributor'20026,418,874'Toroidal plasma source for plasma processing'20026,402,885'Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma'20026,356,097'Capacitive probe for in situ measurement of wafer DC bias voltage'20026,352,049'Plasma assisted processing chamber with separate control of species density'20026,270,617'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'20016,270,687'RF plasma method'20016,248,250'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'20016,247,425'Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor'20016,189,484'Plasma reactor having a helicon wave high density plasma source'20016,185,839'Semiconductor process chamber having improved gas distributor'20016,085,688'Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor'20006,071,372'RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls'20006,030,486'Magnetically confined plasma reactor for processing a semiconductor wafer'20005,942,889'Capacitive probe for in situ measurement of wafer DC bias voltage'19995,900,062'Lift pin for dechucking substrates'19995,897,712'Plasma uniformity control for an inductive plasma source'19995,817,534'RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers'19985,801,386'Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same'19985,779,926'Plasma process for etching multicomponent alloys'19985,777,289'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'19985,753,044'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'19985,565,681'Ion energy analyzer with an electrically controlled geometric filter'19965,451,784'Composite diagnostic wafer for semiconductor wafer processing systems'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2008Patents assigned to APPLIED MATERIALS INC (37)· patent assignee history
1995–1996Based in Campbell, CA, US· patent location history
1998–2008Based in San Jose, CA, US· patent location history
1998–2001Based in Santa Clara, CA, US· patent location history
2002–2014Based in Pleasanton, CA, US· patent location history
2004–2014Patents assigned to LAM RES CORP (22)· patent assignee history
2012–2014Patents assigned to LOEWENHARDT PETER (4)· patent assignee history
2012–2013Patents assigned to FISCHER ANDREAS (2)· patent assignee history
2014Patents assigned to DENTY JR WILLIAM M (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC371995–2008
LAM RES CORP222004–2014
LOEWENHARDT PETERself42012–2014
FISCHER ANDREAS22012–2013
DENTY JR WILLIAM M12014
Locations
LocationPatentsSpan
Pleasanton, California, US282002–2014
San Jose, California, US221998–2008
Santa Clara, California, US71998–2001
Campbell, California, US21995–1996