Inventor
Kosuke Hatsuda
Inventor
Tokyo, JP
Overview
Patents· 77 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores42%
G06FElectric digital data processing40%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use5%
H01LSemiconductor devices3%
H10BElectronic memory devices3%
H10NElectric solid-state devices not otherwise provided for3%
H01FMagnets2%
H03MCoding1%
H03KPulse technique1%
PatentTitleYear
11,074,954Memory device202111,030,043Error correction circuit and memory system202110,996,868Memory system storing management information and method of controlling same202110,956,092Semiconductor storage device202110,901,625Memory system2021RE047946Method for determining the exhaustion level of semiconductor memory202010,535,391Semiconductor storage device202010,431,277Memory device201910,410,733Memory device and controlling method thereof201910,388,345Memory device201910,379,762Memory system storing management information and method of controlling same201910,338,835Memory device201910,311,931Semiconductor memory device201910,269,403Semiconductor storage device201910,157,655Memory device201810,097,207ECC circuit, storage device and memory system201810,067,698Memory system storing management information and method of controlling same20189,900,011'Semiconductor apparatus, routing module, and control method of semiconductor apparatus'20189,818,467'Semiconductor memory device'20179,582,370'Memory system storing management information and method of controlling same'20179,552,861'Resistance change memory'20179,417,799'Memory system and method for controlling a nonvolatile semiconductor memory'20169,349,449'Resistance change type memory'20169,330,732'Semiconductor memory device'20169,305,627'Resistance change type memory'20169,293,171'Resistance change memory'20169,213,635'Memory system'20159,201,717'Memory system'20159,176,816'Memory system configured to control data transfer'20159,164,896'Memory system storing management information and method of controlling same'20159,142,293'Resistance change type memory'20159,092,324'Memory system and method for controlling a nonvolatile semiconductor memory'20159,093,148'Resistance change type memory'20159,075,740'Memory system'20159,043,564'Memory system with fixed and variable pointers'20159,021,190'Memory system'20159,015,421'Memory system'20159,009,425'Memory system with fixed and variable pointers'20159,003,261'Memory system'20158,938,586'Memory system with flush processing from volatile memory to nonvolatile memory utilizing management tables and different management units'20158,930,615'Memory system with efficient data search processing'20158,850,107'Memory system storing management information and method of controlling same'20148,819,350'Memory system'20148,762,631'Memory system'20148,751,901'Nonvolatile semiconductor memory system configured to control data transfer'20148,745,313'Memory system and method for controlling a nonvolatile semiconductor memory'20148,738,867'Memory system'20148,706,950'Memory system'20148,677,059'Memory system'20148,661,191'Memory system'20148,650,373'Memory system, controller, and data transfer method'20148,630,136'Semiconductor memory'20148,601,219'Memory system'20138,554,984'Memory system'20138,520,465'Semiconductor device'20138,484,432'Memory system'20138,447,914'Memory system managing the number of times of erasing'20138,443,133'Memory system storing management information and method of controlling same'20138,438,343'Memory system with fixed and variable pointers'20138,429,333'Memory system with efficient data search processing'20138,407,402'Memory system and data erasing method therefor'20138,285,954'Memory system managing a plurality of logs'20128,276,043'Memory system'20128,255,762'Semiconductor memory device with error correction'20128,225,047'Memory system with pre-fetch operation'20128,209,471'Memory system'20128,190,812'Memory system capable of restoring broken information'20128,176,237'Solid state drive with input buffer'20128,171,208'Memory system'20128,156,393'Memory system'20128,108,593'Memory system for flushing and relocating data'20128,108,594'Memory system'20128,078,923'Semiconductor memory device with error correction'20117,904,640'Memory system with write coalescing'20117,778,078'Memory system and control method thereof'20107,277,341'Semiconductor memory device'20077,269,084'Semiconductor memory device'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2018Patents assigned to TOSHIBA KK (58)· patent assignee history
2007–2021Based in Tokyo, JP· patent location history
2011–2015Patents assigned to HATSUDA KOSUKE (29)· patent assignee history
2012–2015Patents assigned to MATSUZAKI HIDENORI (21)· patent assignee history
2012–2015Patents assigned to YANO JUNJI (21)· patent assignee history
2012–2013Based in Minato-ku, JP· patent location history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (17)· patent assignee history
2018–2021Based in Bunkyo-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 58 | 2007–2018 |
| HATSUDA KOSUKEself | 29 | 2011–2015 |
| MATSUZAKI HIDENORI | 21 | 2012–2015 |
| YANO JUNJI | 21 | 2012–2015 |
| TOSHIBA MEMORY CORP | 17 | 2017–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 65 | 2007–2021 |
| Minato-ku, JP | 9 | 2012–2013 |
| Bunkyo-ku, JP | 3 | 2018–2021 |