Inventor
Tony K. Quach
Inventor
Kettering, OH, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H03MCoding4%
H05KPrinted circuits4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
9,065,472'Multi-function reconfigurable delta sigma DAC'20156,971,160'Hybrid electrical circuit method with mated substrate carrier method'20056,884,717'Stiffened backside fabrication for microwave radio frequency wafers'20056,653,214'Measured via-hole etching'20036,222,210'Complementary heterostructure integrated single metal transistor apparatus'20016,198,116'Complementary heterostructure integrated single metal transistor fabrication method'20016,066,865'Single layer integrated metal enhancement mode field-effect transistor apparatus'20006,020,226'Single layer integrated metal process for enhancement mode field-effect transistor'20006,004,881'Digital wet etching of semiconductor materials'19995,976,920'Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)'19995,940,694'Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops'19995,869,364'Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)'19995,796,131'Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal'19985,698,870'High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal'19975,698,900'Field effect transistor device with single layer integrated metal and retained semiconductor masking'19975,336,930'Backside support for thin wafers'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–1998Patents assigned to US ARMY (4)· patent assignee history
1994–2001Based in Kettering, OH, US· patent location history
1999–2015Patents assigned to US AIR FORCE (11)· patent assignee history
2003–2015Based in Lebanon, OH, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| US AIR FORCE | 11 | 1999–2015 |
| US ARMY | 4 | 1994–1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kettering, OH, US | 12 | 1994–2001 |
| Lebanon, OH, US | 4 | 2003–2015 |