Inventor

Shozo Muraoka

Inventor

Gunma, JP

Overview

1999–2002

Patent span

Chemistry

Primary field (CPC C)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary

C30BSingle-crystal growth51%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests27%

Y10TTechnical subjects covered by former us classification22%

PatentTitleYear

6,364,947'Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same'2002 6,348,180'Silicon single crystal wafer having few crystal defects'2002 6,334,896'Single-crystal silicon wafer having few crystal defects and method for manufacturing the same'2002 6,261,361'Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it'2001 6,197,109'Method for producing low defect silicon single crystal doped with nitrogen'2001 6,159,438'Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same'2000 6,120,598'Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method'2000 6,120,599'Silicon single crystal wafer having few crystal defects, and method for producing the same'2000 6,077,343'Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it'2000 6,066,306'Silicon single crystal wafer having few crystal defects, and method RFO producing the same'2000 6,053,975'Crystal holding apparatus'2000 6,048,395'Method for producing a silicon single crystal having few crystal defects'2000 6,027,562'Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method'2000 5,976,246'Process for producing silicon single crystal'1999 5,968,264'Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same'1999 5,968,266'Apparatus for manufacturing single crystal of silicon'1999 5,964,941'Crystal pulling method and apparatus'1999 5,948,164'Seed crystal holder'1999 5,911,821'Method of holding a monocrystal, and method of growing the same'1999 5,882,397'Crystal pulling method'1999 5,871,578'Methods for holding and pulling single crystal'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2002Patents assigned to SHINETSU HANDOTAI KK (20)· patent assignee history

1999Patents assigned to SHIN ETSU HANDOTAI LTD (1)· patent assignee history

1999–2002Based in Gunma, JP· patent location history

1999Based in Maebashi, JP· patent location history

1999–2002Based in Annaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHINETSU HANDOTAI KK	20	1999–2002
SHIN ETSU HANDOTAI LTD	1	1999

Locations

Location	Patents	Span
Gunma, JP	14	1999–2002
Maebashi, JP	4	1999
Annaka, JP	3	1999–2002