Inventor
Yuri Erokhin
Inventor
Georgetown, MA, US
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01LSemiconductor devices11%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%
H10DInorganic electric semiconductor devices11%
H01JElectric discharge tubes or discharge lamps7%
G02BOptical elements, systems or apparatus4%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them4%
H04NPictorial communication, e.g. television4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
RE048398Process and system for uniformly crystallizing amorphous silicon substrate by fiber laser202110,409,148RGB projector with multi-laser broadband light source and system for dynamically controlling image contrast ratio20199,941,120Process and system for uniformly crystallizing amorphous silicon substrate by fiber laser20189,190,498'Technique for forming a FinFET device using selective ion implantation'20158,617,955'Method and system for forming low contact resistance device'20138,598,025'Doping of planar or three-dimensional structures at elevated temperatures'20137,939,424'Wafer bonding activated by ion implantation'20117,820,527'Cleave initiation using varying ion implant dose'20107,294,561'Internal gettering in SIMOX SOI silicon substrates'20077,112,509'Method of producing a high resistivity SIMOX silicon substrate'20066,998,353'Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers'20066,255,662'Rutherford backscattering detection for use in Ion implantation'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001Patents assigned to AXCELIS TECH INC (1)· patent assignee history
2001–2007Based in Newburyport, MA, US· patent location history
2006–2007Patents assigned to IBIS TECHNOLOGY CORP (2)· patent assignee history
2010–2015Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (5)· patent assignee history
2010–2013Based in Georgetown, MA, US· patent location history
2013Patents assigned to EROKHIN YURI (2)· patent assignee history
2015Based in Gloucester, MA, US· patent location history
2018–2021Patents assigned to IPG PHOTONICS CORP (3)· patent assignee history
2018–2021Based in Charlton, MA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT | 5 | 2010–2015 |
| IPG PHOTONICS CORP | 3 | 2018–2021 |
| EROKHIN YURIself | 2 | 2013 |
| IBIS TECHNOLOGY CORP | 2 | 2006–2007 |
| AXCELIS TECH INC | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Georgetown, Massachusetts, US | 4 | 2010–2013 |
| Newburyport, Massachusetts, US | 4 | 2001–2007 |
| Charlton, Massachusetts, US | 3 | 2018–2021 |
| Gloucester, Massachusetts, US | 1 | 2015 |