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Inventor

Hong Yang

Inventor
Richardson, TX, US

Overview

37→
Patents
2000–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1030%
H01LSemiconductor devices19%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10TTechnical subjects covered by former us classification6%
F28DHeat-exchange apparatus, not provided for in another subclass, in which the heat-exchange media do not come into direct contact3%
G06FElectric digital data processing2%
F04DNon-positive-displacement pumps1%
F21VFunctional features or details of lighting devices or systems thereof1%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted1%
PatentTitleYear
10,720,499Semiconductor device having polysilicon field plate for power MOSFETs202010,573,553Semiconductor product and fabrication process202010,541,326Multiple shielding trench gate FET202010,347,626High quality deep trench oxide201910,253,968Push-button switch operating portion with diverging and converging lens201910,211,096Semiconductor product and fabrication process20199,991,350Low resistance sinker contact20189,865,718'Power MOSFET with metal filled deep sinker contact for CSP'20189,825,030'High quality deep trench oxide'20179,825,138'Field effect transistor and method of making'20179,711,639'Multiple shielding trench gate FET'20179,653,342'Trench having thick dielectric selectively on bottom portion'20179,461,131'High quality deep trench oxide'20169,455,222'IC having failsafe fuse on field dielectric'20169,406,774'Field effect transistor and method of making'20169,397,180'Low resistance sinker contact'20169,299,830'Multiple shielding trench gate fet'20169,230,851'Reduction of polysilicon residue in a trench for polysilicon trench filling processes'20168,748,976'Dual RESURF trench field plate in vertical MOSFET'20148,413,714'Heat dissipation device having a fan holder thereon'20138,069,908'Heat dissipation device having a fan holder'20118,059,410'Heat dissipation device'20118,050,038'Heat dissipation device'20118,047,271'Heat dissipation device having a fan holder'20117,990,713'Heat dissipation device and method for manufacturing the same'20117,965,507'Heat dissipation device having a fan holder thereon'20117,924,566'Heat dissipation device'20117,869,217'Toolless locking device'20117,869,212'Heat dissipation device'20117,697,297'Heat dissipation device having a clip assembly'20107,613,001'Heat dissipation device with heat pipe'20097,515,419'Locking device for heat sink'20097,382,622'Heat sink assembly'20087,301,769'Fan holder'20077,100,676'Fan duct'20066,420,236'Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices'20026,063,692'Oxidation barrier composed of a silicide alloy for a thin film and method of construction'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2020Patents assigned to TEXAS INSTRUMENTS INC (20)· patent assignee history
2000–2002Based in Dallas, TX, US· patent location history
2006–2013Based in Shenzhen, CN· patent location history
2007–2013Patents assigned to FOXCONN TECH CO LTD (14)· patent assignee history
2008–2013Patents assigned to FU ZHUN PRECISION IND SHENZHEN (14)· patent assignee history
2011–2013Patents assigned to YANG HONG-CHENG (3)· patent assignee history
2011Patents assigned to CHEN CHUN-CHI (2)· patent assignee history
2014–2020Based in Richardson, TX, US· patent location history
2019Based in Suzhou, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TEXAS INSTRUMENTS INC202000–2020
FOXCONN TECH CO LTD142007–2013
FU ZHUN PRECISION IND SHENZHEN142008–2013
YANG HONG-CHENGself32011–2013
CHEN CHUN-CHI22011
Locations
LocationPatentsSpan
Richardson, Texas, US182014–2020
Shenzhen, CN162006–2013
Dallas, Texas, US22000–2002
Suzhou, CN12019