Inventor
Nobuyuki Otsuka
Inventor
Kawanishi, JP
Overview
Patents· 50 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light18%
B82YSpecific uses or applications of nanostructures17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
F16DCouplings for transmitting rotation7%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H10DInorganic electric semiconductor devices6%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters3%
PatentTitleYear
9,543,849'Power conversion apparatus, power conversion method, motor system, and three-phase motor'20179,531,317'Power conversion apparatus, power conversion method, and motor system'20169,134,363'Operation check support device and operation check support method'20158,941,350'Power conversion apparatus, power conversion method, motor system, and two-phase induction motor'20158,866,516'Gate drive circuit'20148,427,090'Magnetic-drive-pulsation motor'20138,384,212'Semiconductor equipment and method of manufacturing the same'20137,737,037'Semiconductor device and method of manufacturing the same'20107,440,899'Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method'20087,414,261'Ballistic semiconductor device'20087,323,725'Semiconductor device'20087,160,748'Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device'20077,009,216'Semiconductor light emitting device and method of fabricating the same'20067,005,680'Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members'20066,953,954'Plasma oscillation switching device'20056,921,678'Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device'20056,917,457'Process of fabricating semiconductor light emitting device'20056,861,679'Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor'20056,858,877'Nitride semiconductor, method for manufacturing the same and nitride semiconductor device'20056,777,253'Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device'20046,778,308'Process of fabricating semiconductor light emitting device'20046,653,662'Semiconductor light-emitting device, method for fabricating the same, and method for driving the same'20036,586,774'Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device'20036,238,752'Diamino compounds, polyamic acids, polyimides, liquid crystal aligning films using said polyimide films and liquid crystal display devices using said aligning films'20016,151,351'Distributed feedback semiconductor laser and method for producing the same'20006,110,756'Method for producing semiconductor laser'20006,107,112'Distributed feedback semiconductor laser and method for producing the same'20006,104,738'Semiconductor laser and process for producing the same'20006,090,909'Uv-ray-dimerized high molecular compound, liquid crystal aligning film using above high molecular compound and liquid crystal display element using above aligning film'20005,960,257'Method distributed feedback semiconductor laser for fabricating'19995,856,207'Method for producing a semiconductor laser'19995,764,682'Distributed feedback semiconductor laser and method for fabricating the same'19985,652,762'Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same'19975,621,747'Multi quantum well semiconductor laser and optical communication system using the same'19975,568,501'Semiconductor laser and method for producing the same'19965,539,766'Distributed feedback semiconductor laser'19965,494,521'Apparatus and method for vapor growth'19965,438,952'Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer'19955,319,657'Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof'19945,311,534'Semiconductor laser devices'19945,308,433'Apparatus and method for vapor growth'19944,689,979'Pressing method and punch and die press for the same'19874,578,048'Slidable type constant velocity universal joint'19864,494,941'Constant velocity universal joint'19854,379,706'Slidable-type constant velocity universal joint'19834,331,005'Constant velocity universal joint'19824,231,232'Constant velocity universal joint'19804,196,598'Apparatus for prevention of the removal of a universal joint'19804,188,803'Constant velocity universal joint'19804,180,344'Slidable type constant velocity universal joint'1979Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1979–1987Patents assigned to HONDA MOTOR CO LTD (9)· patent assignee history
1979–1986Based in Kawagoe, JP· patent location history
1994–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (30)· patent assignee history
1996–2008Based in Kawanishi, JP· patent location history
2000–2001Patents assigned to CHISSO CORP (2)· patent assignee history
2000–2001Based in Kanagawa, JP· patent location history
2003–2017Based in Hyogo, JP· patent location history
2013–2015Patents assigned to PANASONIC CORP (5)· patent assignee history
2013Patents assigned to OTSUKA NOBUYUKI (2)· patent assignee history
2013–2015Based in Kyoto, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 30 | 1994–2008 |
| HONDA MOTOR CO LTD | 9 | 1979–1987 |
| PANASONIC CORP | 5 | 2013–2015 |
| CHISSO CORP | 2 | 2000–2001 |
| OTSUKA NOBUYUKIself | 2 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawanishi, JP | 22 | 1996–2008 |
| Kawagoe, JP | 8 | 1979–1986 |
| Hyogo, JP | 6 | 2003–2017 |
| Kyoto, JP | 5 | 2013–2015 |
| Kanagawa, JP | 2 | 2000–2001 |