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Inventor

Sung-II Chang

Inventor
Hwaseong-si, KR

Overview

2→
Patents
2015–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices29%
H10BElectronic memory devices29%
H10DInorganic electric semiconductor devices29%
H10NElectric solid-state devices not otherwise provided for14%
PatentTitleYear
9,595,582'Layouts and vertical structures of MOSFET devices'20179,177,965'Nonvolatile memory device in three-dimensional structure with a stress reducing materials on the channel'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2017Patents assigned to CHANG SUNG-II (2)· patent assignee history
2015–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (2)· patent assignee history
2015Patents assigned to LEE CHANGHYUN (1)· patent assignee history
2015–2017Based in Hwaseong-si, KR· patent location history
2017Patents assigned to JU NOK-HYUN (1)· patent assignee history
2017Patents assigned to LEE CHAN-HO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CHANG SUNG-IIself22015–2017
SAMSUNG ELECTRONICS CO LTD22015–2017
JU NOK-HYUN12017
LEE CHAN-HO12017
LEE CHANGHYUN12015
Locations
LocationPatentsSpan
Hwaseong-si, KR22015–2017