Inventor

Noritsugu Takahashi

Inventor
Kokubunji, JP

Overview

24→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps58%
G01NInvestigating or analysing materials by determining their chemical or physical properties26%
B82YSpecific uses or applications of nanostructures3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
G06TImage data processing or generation, in general3%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
10,707,047Measuring device and measuring method202010,559,450Scanning electron microscope202010,134,558Scanning electron microscope20189,960,006Charged-particle-beam device20189,443,695'Charged-particle beam device'20169,312,091'Charged particle beam apparatus'20169,230,775'Charged particle instrument'20169,159,533'Charged particle beam apparatus permitting high-resolution and high-contrast observation'20158,859,962'Charged-particle microscope'20148,841,612'Charged particle beam microscope'20148,785,890'Charged particle beam apparatus permitting high-resolution and high-contrast observation'20148,735,814'Electron beam device'20148,467,595'Defect review system and method, and program'20138,431,915'Charged particle beam apparatus permitting high resolution and high-contrast observation'20138,405,026'Charged particle beam apparatus'20138,389,935'Charged particle beam apparatus permitting high-resolution and high-contrast observation'20138,209,135'Wafer inspection data handling and defect review tool'20128,153,969'Inspection method and inspection system using charged particle beam'20128,026,481'Charged particle apparatus, scanning electron microscope, and sample inspection method'20117,956,324'Charged particle beam apparatus for forming a specimen image'20117,847,249'Charged particle beam apparatus'20107,462,828'Inspection method and inspection system using charged particle beam'20087,449,690'Inspection method and inspection apparatus using charged particle beam'20086,821,801'Manufacturing method of semiconductor laser diode'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2016Based in Kokubunji, JP· patent location history
2008–2020Patents assigned to HITACHI HIGH TECH CORP (23)· patent assignee history
2008–2012Based in Hitachinaka, JP· patent location history
2012–2016Patents assigned to TAKAHASHI NORITSUGU (9)· patent assignee history
2012–2016Patents assigned to FUKUDA MUNEYUKI (8)· patent assignee history
2012–2014Patents assigned to SUZUKI NAOMASA (6)· patent assignee history
2013–2014Patents assigned to SHOJO TOMOYASU (5)· patent assignee history
2016–2020Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI HIGH TECH CORP232008–2020
TAKAHASHI NORITSUGUself92012–2016
FUKUDA MUNEYUKI82012–2016
SUZUKI NAOMASA62012–2014
SHOJO TOMOYASU52013–2014
Locations
LocationPatentsSpan
Kokubunji, JP152004–2016
Tokyo, JP62016–2020
Hitachinaka, JP32008–2012