Inventor
Shuangshuang WU
Inventor
CN
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10BElectronic memory devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10DInorganic electric semiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G01RMeasuring electric variables5%
PatentTitleYear
12,598,748Three-dimensional memory devices and methods for forming the same202612,575,096Three-dimensional memory devices and methods for forming the same202612,424,519Semiconductor structure, method for manufacturing semiconductor structure, and memory202512,412,790Semiconductor structure, memory, and crack testing method202512,243,779Semiconductor structure and method for manufacturing semiconductor structure202511,955,511Semiconductor structure and method for manufacturing semiconductor structure202411,901,405Semiconductor structure and method for manufacturing semiconductor structure202411,882,686Capacitor and forming method thereof, and DRAM and forming method thereof2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2025Patents assigned to CHANGXIN MEMORY TECH INC (6)· patent assignee history
2024–2026Based in CN· patent location history
2026Patents assigned to YANGTZE MEMORY TECH CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHANGXIN MEMORY TECH INC | 6 | 2024–2025 |
| YANGTZE MEMORY TECH CO LTD | 2 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 8 | 2024–2026 |