Inventor
Wolfgang Raberg
Inventor
Sauerlach, DE
Overview
Patents· 54 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for20%
G01RMeasuring electric variables17%
G11CStatic stores9%
H01LSemiconductor devices7%
H10BElectronic memory devices7%
B82YSpecific uses or applications of nanostructures5%
G01DMeasuring not specially adapted for a specific variable4%
G11BInformation storage based on relative movement between record carrier and transducer4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
11,047,709Magnetic field sensor and magnetic field sensing method202110,996,292Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits202110,989,769Magneto-resistive structured device having spontaneously generated in-plane closed flux magnetization pattern202110,852,369Stray field robust xMR sensor using perpendicular anisotropy202010,665,778Methods and apparatuses for producing magnetoresistive apparatuses202010,649,043Magnetic field sensor device configured to sense with high precision and low jitter202010,649,010Current sensing202010,585,148Magnetic sensor device and method for a magnetic sensor device having a magneto-resistive structure202010,571,527Magnetic sensor device and magnetic sensing method202010,545,199Lateral transmission of signals across a galvanic isolation barrier202010,458,813Magnetic field sensor and magnetic field sensing method201910,422,662Magnetic field sensor and magnetic field sensing method201910,403,813Method for forming a magnetoresistive device201910,399,394Single axis earth magnetic field sensor for motion detection in TPMS application201910,324,144Lateral transmission of signals across a galvanic isolation barrier201910,317,480Magneto resistive device201910,109,367Magnetic memory device and method for operating the same201810,008,225Magnetic sensor device having a magneto-resistive structure that generates a vortex magnetization pattern20189,978,406Magnetic sensor device having a magneto-resistive structure that generates a vortex magnetization pattern20189,959,890Magnetoresistive devices and methods for manufacturing magnetoresistive devices20189,691,970'Magnetoresistive devices and methods for manufacturing magnetoresistive devices'20179,620,707'Magnetoresistive devices and methods for manufacturing magnetoresistive devices'20179,612,298'Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy'20179,570,099'Magnetoresistive devices and methods for manufacturing magnetoresistive devices'20179,523,747'Magnetoresistive device and method for manufacturing the same'20169,411,024'Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy'20169,266,719'Methods of manufacture MEMS devices'20169,240,546'Magnetoresistive devices and methods for manufacturing magnetoresistive devices'20169,207,292'Magnetoresistive device and method for manufacturing the same'20159,164,157'Magnetoresistive device and method for manufacturing the same'20158,492,810'Method of fabricating an integrated electronic circuit with programmable resistance cells'20138,470,092'Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks'20138,198,690'MEMS devices and methods of manufacture thereof'20128,174,260'Integrated circuit with magnetic material magnetically coupled to magneto-resistive sensing element'20128,105,445'Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks'20128,063,633'Magnetoresistive magnetic field sensor structure'20118,049,490'Silicon MEMS resonator devices and methods'20117,851,875'MEMS devices and methods of manufacture thereof'20107,782,577'MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture'20107,732,888'Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device'20107,715,225'Memory cell using spin induced switching effects'20107,612,627'Integrated binary phase shift keying with silicon MEMS resonators'20097,602,032'Memory having cap structure for magnetoresistive junction and method for structuring the same'20097,473,656'Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks'20097,423,282'Memory structure and method of manufacture'20087,408,803'Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method'20087,344,896'Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof'20087,316,933'Method for producing an annular microstructure element'20087,211,446'Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory'20077,149,105'Magnetic tunnel junctions for MRAM devices'20066,985,384'Spacer integration scheme in MRAM technology'20066,977,181'MTJ stack with crystallization inhibiting layer'20056,638,774'Method of making resistive memory elements with reduced roughness'20036,567,300'Narrow contact design for magnetic random access memory (MRAM) arrays'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to INFINEON TECHNOLOGIES AG (39)· patent assignee history
2003Based in Fishkill, NY, US· patent location history
2005–2013Based in Fontainebleau, FR· patent location history
2006–2013Patents assigned to IBM (6)· patent assignee history
2007Based in Fountainebleau, FR· patent location history
2008–2010Patents assigned to ALTIS SEMICONDUCTOR SNC (5)· patent assignee history
2009–2021Based in Sauerlach, DE· patent location history
2010–2013Patents assigned to QIMONDA AG (4)· patent assignee history
2010Based in Saurbach, DE· patent location history
2011–2016Patents assigned to RABERG WOLFGANG (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 39 | 2003–2021 |
| RABERG WOLFGANGself | 9 | 2011–2016 |
| IBM | 6 | 2006–2013 |
| ALTIS SEMICONDUCTOR SNC | 5 | 2008–2010 |
| QIMONDA AG | 4 | 2010–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sauerlach, DE | 37 | 2009–2021 |
| Fontainebleau, FR | 13 | 2005–2013 |
| Fishkill, New York, US | 2 | 2003 |
| Saurbach, DE | 1 | 2010 |
| Fountainebleau, FR | 1 | 2007 |