Inventor

Fumikazu Imai

Inventor

Tsukuba, JP

Overview

2002–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices31%

H10DInorganic electric semiconductor devices31%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%

G11BInformation storage based on relative movement between record carrier and transducer4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

C23CCoating metallic material2%

C30BSingle-crystal growth2%

PatentTitleYear

10,615,031Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate2020 10,600,921Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device2020 10,600,872Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device2020 10,580,870Method of manufacturing silicon carbide semiconductor device2020 10,374,050Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device2019 10,103,220Method of manufacturing semiconductor device2018 10,032,894Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device2018 9,929,232'Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrations'2018 9,887,270'Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device'2018 9,685,333'Manufacturing method of silicon carbide semiconductor device'2017 9,401,411'SiC semiconductor device and method for manufacturing the same'2016 9,269,579'Method for manufacturing silicon carbide semiconductor device'2016 9,263,543'Method for manufacturing a semiconductor device'2016 9,240,451'Silicon carbide semiconductor device'2016 9,159,792'SiC semiconductor device and method for manufacturing the same'2015 9,129,939'SiC semiconductor device and method for manufacturing the same'2015 6,424,478'Apparatus for recording and reproducing digital data and method for the same'2002 6,362,928'Apparatus for recording and reproducing digital data and method for the same'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (2)· patent assignee history

2002Based in Osaka, JP· patent location history

2015–2020Patents assigned to FUJI ELECTRIC CO LTD (16)· patent assignee history

2015–2020Based in Tsukuba, JP· patent location history

2015–2019Based in Kawasaki, JP· patent location history

2016Patents assigned to IMAI FUMIKAZU (1)· patent assignee history

2016Patents assigned to KINOSHITA AKIMASA (1)· patent assignee history

2016Patents assigned to TSUJI TAKASHI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJI ELECTRIC CO LTD	16	2015–2020
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD	2	2002
IMAI FUMIKAZUself	1	2016
KINOSHITA AKIMASA	1	2016
TSUJI TAKASHI	1	2016

Locations

Location	Patents	Span
Tsukuba, JP	12	2015–2020
Kawasaki, JP	4	2015–2019
Osaka, JP	2	2002