Inventor
June-key Lee
Inventor
Suwon-si, KR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices14%
H10DInorganic electric semiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
C01GCompounds containing metals not covered by subclasses c01d or c01f8%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds8%
C04BLime, magnesia8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
B82YSpecific uses or applications of nanostructures5%
G11CStatic stores5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
PatentTitleYear
8,859,413'Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof'20148,257,984'Ferroelectric capacitor and method of manufacturing the same'20127,892,917'Method for forming bismuth titanium silicon oxide thin film'20117,767,502'Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate'20107,560,042'Ferroelectric thin film and device including the same'20097,374,994'Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film'20087,238,388'Ferroelectric thin film and method for forming the same'20077,176,488'Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof'20077,013,031'Fingerprint sensor using a piezoelectric membrane'20067,002,193'Ferroelectric capacitor and method of manufacturing the same'20066,992,923'Single transistor type magnetic random access memory device and method of operating and manufacturing the same'20066,919,597'Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film'20056,891,241'Single transistor type magnetic random access memory device and method of operating and manufacturing the same'20056,815,783'Single transistor type magnetic random access memory device and method of operating and manufacturing the same'20046,593,149'Manufacturing method for ferroelectric thin film using sol-gel process'20036,391,119'Method for cleaning PZT thin film'20025,751,540'Ferroelectric capacitor with rhodium electrodes'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2012Patents assigned to SAMSUNG ELECTRONICS CO LTD (16)· patent assignee history
1998–2012Based in Suwon-si, KR· patent location history
2005–2011Based in Yongin, KR· patent location history
2012–2014Patents assigned to LEE JUNE-KEY (2)· patent assignee history
2012Patents assigned to PARK YOUNG-SOO (1)· patent assignee history
2014Patents assigned to PARK SUNG-SOO (1)· patent assignee history
2014Patents assigned to SAMSUNG CORNING PREC MAT CO (1)· patent assignee history
2014Based in Seongnam-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 16 | 1998–2012 |
| LEE JUNE-KEYself | 2 | 2012–2014 |
| PARK SUNG-SOO | 1 | 2014 |
| PARK YOUNG-SOO | 1 | 2012 |
| SAMSUNG CORNING PREC MAT CO | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Suwon-si, KR | 11 | 1998–2012 |
| Yongin, KR | 5 | 2005–2011 |
| Seongnam-si, KR | 1 | 2014 |