LexDanaLexDanabeta
Inventor

Kenichi Murooka

Inventor
San Jose, CA, US

Overview

61→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores27%
H10BElectronic memory devices25%
H10NElectric solid-state devices not otherwise provided for20%
H01LSemiconductor devices13%
H10DInorganic electric semiconductor devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G06FElectric digital data processing2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
B82YSpecific uses or applications of nanostructures1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
11,069,745Memory device202111,011,580Memory device202110,693,064Semiconductor memory device202010,686,012Resistance change type memory202010,600,845Memory device202010,439,002Semiconductor memory device and method of manufacturing the same201910,141,374Memory device201810,026,781Memory device20189,831,290Semiconductor memory device having local bit line with insulation layer formed therein20179,773,845'Semiconductor memory device and method of manufacturing the same'20179,741,766'Memory device'20179,721,659'Memory device, method of controlling memory device, and memory system'20179,673,389'Memory device'20179,653,684'Semiconductor memory device'20179,508,430'Three dimensional memory device including memory cells with resistance change layers'20169,472,283'Memory device having resistance change element and method of controlling the same'20169,466,367'Memory device, method of controlling memory device, and memory system'20169,455,257'Semiconductor memory device and method of manufacturing the same'20169,368,160'Memory device'20169,349,446'Semiconductor memory device and method of controlling the same'20169,343,144'Memory device and method of controlling memory device'20169,324,425'Memory device, method of controlling memory device, and memory system'20169,293,704'Memory device and method of manufacturing memory device'20169,231,029'Semiconductor memory device and method for manufacturing same'20169,224,459'Memory device and method of initializing memory device'20159,209,389'Memory device and fabricating method thereof'20159,171,615'Semiconductor memory device'20159,129,677'Memory device and method of controlling memory device'20159,123,411'Memory device, method of controlling memory device, and memory system'20158,971,093'Memory device and method of controlling memory device'20158,963,115'Memory device and method of manufacturing memory device'20158,891,277'Memory device'20148,848,418'Semiconductor memory device'20148,766,225'Storage device'20148,760,908'Non-volatile semiconductor memory device'20148,717,840'Semiconductor memory device and method of controlling the same'20148,681,532'Resistance change memory'20148,570,786'Memory device and fabricating method thereof'20138,565,007'Semiconductor memory device'20138,498,142'Resistance change memory'20138,406,034'Semiconductor memory device'20138,391,048'Non-volatile semiconductor memory device including memory cells with a variable resistor'20138,335,102'Resistance change memory'20128,324,606'Resistance change type memory'20128,320,158'Nonvolatile semiconductor memory device'20128,320,157'Nonvolatile semiconductor memory device'20128,320,156'Semiconductor memory device'20128,295,077'Semiconductor memory device'20128,254,160'Semiconductor memory device'20128,222,626'Semiconductor memory device, method of manufacturing the same, and method of screening the same'20128,134,177'Switching element, semiconductor device and method of manufacturing the same'20128,086,107'Optical-electrical hybrid integrated circuit'20118,085,577'Nonvolatile semiconductor memory device and method of data write/data erase therein'20118,084,830'Nonvolatile semiconductor memory device'20117,995,374'Semiconductor memory device, method of manufacturing the same, and method of screening the same'20117,706,171'Storage device'20107,638,382'Storage apparatus and manufacturing method thereof'20097,569,879'Nonvolatile semiconductor memory device and manufacturing method thereof'20097,379,324'Storage device'20086,366,639'X-ray mask, method of manufacturing the same, and X-ray exposure method'20026,078,641'X-ray lithography system and x-ray lithography method'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2017Patents assigned to TOSHIBA KK (51)· patent assignee history
2000–2011Based in Kanagawa, JP· patent location history
2002–2016Based in Yokohama, JP· patent location history
2011–2017Patents assigned to MUROOKA KENICHI (21)· patent assignee history
2011–2014Patents assigned to KANNO HIROSHI (8)· patent assignee history
2011–2013Patents assigned to ICHIHARA REIKA (5)· patent assignee history
2012–2021Based in San Jose, CA, US· patent location history
2012–2020Based in Yokkaichi, JP· patent location history
2013Based in Mie, JP· patent location history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (10)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK512000–2017
MUROOKA KENICHIself212011–2017
TOSHIBA MEMORY CORP102017–2021
KANNO HIROSHI82011–2014
ICHIHARA REIKA52011–2013
Locations
LocationPatentsSpan
San Jose, California, US362012–2021
Yokohama, JP182002–2016
Yokkaichi, JP42012–2020
Kanagawa, JP22000–2011
Mie, JP12013