Inventor
Wei-Ming Liao
Inventor
Taoyuan, TW
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices27%
H10BElectronic memory devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures2%
G11CStatic stores2%
PatentTitleYear
10,825,931Semiconductor device with undercutted-gate and method of fabricating the same202010,825,898Semiconductor layout structure including asymmetrical channel region202010,818,800Semiconductor structure and method for preparing the same202010,763,212Semiconductor structure202010,559,661Transistor device and semiconductor layout structure including asymmetrical channel region202010,559,560Semiconductor electrostatic discharge protection device202010,461,191Semiconductor device with undercutted-gate and method of fabricating the same201910,446,556Method for preparing a semiconductor memory structure201910,381,351Transistor structure and semiconductor layout structure201910,242,978Semiconductor electrostatic discharge protection device20199,985,105Method of manufacturing a PMOS transistor comprising a dual work function metal gate20189,401,363'Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices'20169,368,494'Semiconductor device and method of manufacturing the same'20169,343,547'Method for fabricating a recessed channel access transistor device'20169,287,271'Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices'20168,912,065'Method of fabricating semiconductor device'20148,659,079'Transistor device and method for manufacturing the same'20148,288,231'Method of fabricating a recessed channel access transistor device'20127,956,403'Two-bit flash memory'20117,667,262'Two bit U-shaped memory structure and method of making the same'20107,642,142'Method for manufacturing a flash memory device with cavities in upper portions of conductors'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to NANYA TECHNOLOGY CORP (19)· patent assignee history
2010–2016Based in Taipei, TW· patent location history
2012–2014Patents assigned to LIAO WEI-MING (3)· patent assignee history
2012Patents assigned to CHANG MING-CHENG (1)· patent assignee history
2012–2016Based in Taoyuan County, TW· patent location history
2014Patents assigned to WU TIEH-CHIANG (2)· patent assignee history
2016Patents assigned to MICRON TECHNOLOGY INC (2)· patent assignee history
2016–2020Based in Taoyuan, TW· patent location history
2016Based in Chu-Dong Township, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NANYA TECHNOLOGY CORP | 19 | 2010–2020 |
| LIAO WEI-MINGself | 3 | 2012–2014 |
| MICRON TECHNOLOGY INC | 2 | 2016 |
| WU TIEH-CHIANG | 2 | 2014 |
| CHANG MING-CHENG | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taoyuan, TW | 12 | 2016–2020 |
| Taipei, TW | 4 | 2010–2016 |
| Taoyuan County, TW | 4 | 2012–2016 |
| Chu-Dong Township, TW | 1 | 2016 |